Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

2015 ◽  
Author(s):  
Hsin-Hung Shen ◽  
Chang-Hung Yu ◽  
Pin Su
Keyword(s):  
Drain Current ◽  
Quantum Capacitance ◽  
Current Loss

scholarly journals Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor characteristics

2021 ◽  
Author(s):  
MUNINDRA MUNINDRA ◽  
DEVA NAND
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Charge Carrier Concentration ◽  
Single Layer Graphene ◽  
Quantum Capacitance ◽  
Large Area ◽  
Source Voltage ◽  
Current Calculation ◽  
The Impact

Abstract A simple, compact, and fundamental physics-based quasi-analytic model for Single layer graphene field effect transistors (GFETs) with large area graphene is presented in which the quantum mechanical density gradient method is utilised. The basic device physics of the two-dimensional (2D) graphene channel is studied analytically. This modeling leads to the precise drain current calculation of the GFETs. The drain current calculation for GFETs starts from charge carrier concentration, its density of states and quantum capacitance(QC). QC depends on the channel voltage as a function of gate to source voltage Vgs and drain to source voltage Vds primarily. The formulation of the drain current with velocity saturation has been done by the Monte Carlo simulation method. The performance of the analytical GFETs model is present the precise values of QC, its impact on drain current and transfer as well as output characteristics. The impact of QC at nanometer technology adds the nonlinearity to characteristics curves. The proposed method provides better results as compared with the previous analytical and simulated results.

ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-223-C4-226 ◽  
Author(s):  
G. POST ◽  
P. DIMITRIOU ◽  
A. FALCOU ◽  
N. DUHAMEL ◽  
G. MERMANT
Keyword(s):  
Drain Current ◽  
Current Drift ◽  
Ion Implanted

Performance analysis of magnetic gear with Halbach array for high power and high speed

2020 ◽  
Vol 64 (1-4) ◽  
pp. 959-967
Author(s):  
Se-Yeong Kim ◽  
Tae-Woo Lee ◽  
Yon-Do Chun ◽  
Do-Kwan Hong
Keyword(s):  
Permanent Magnet ◽  
Eddy Current ◽  
High Power ◽  
High Speed ◽  
Torque Ripple ◽  
Eddy Current Loss ◽  
Element Analysis ◽  
Current Loss ◽  
Halbach Array ◽  
Magnetic Gear

In this study, we propose a non-contact 80 kW, 60,000 rpm coaxial magnetic gear (CMG) model for high speed and high power applications. Two models with the same power but different radial and axial sizes were optimized using response surface methodology. Both models employed a Halbach array to increase torque. Also, an edge fillet was applied to the radial magnetized permanent magnet to reduce torque ripple, and an axial gap was applied to the permanent magnet with a radial gap to reduce eddy current loss. The models were analyzed using 2-D and 3-D finite element analysis. The torque, torque ripple and eddy current loss were compared in both models according to the materials used, including Sm2Co17, NdFeBs (N42SH, N48SH). Also, the structural stability of the pole piece structure was investigated by forced vibration analysis. Critical speed results from rotordynamics analysis are also presented.

Development of Interior Permanent Magnet Motors with Concentrated Windings for Reducing Magnet Eddy Current Loss

2009 ◽  
Vol 129 (11) ◽  
pp. 1022-1029 ◽  
Author(s):  
Katsumi Yamazaki ◽  
Yuji Kanou ◽  
Yu Fukushima ◽  
Shunji Ohki ◽  
Akira Nezu ◽  
...  
Keyword(s):  
Permanent Magnet ◽  
Eddy Current ◽  
Eddy Current Loss ◽  
Permanent Magnet Motors ◽  
Current Loss ◽  
Interior Permanent Magnet

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Mechanism of drain current droop in GaAs MESFETs

1995 ◽  
Vol 31 (21) ◽  
pp. 1875-1876 ◽  
Author(s):  
P.H. Ladbrooke ◽  
A.K. Jastrzebski ◽  
J.P. Bridge ◽  
R.J. Donarski ◽  
J.E. Barnaby
Keyword(s):  
Drain Current
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