Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure
2009 ◽
Vol 56
(12)
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pp. 3049-3054
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Keyword(s):
2018 ◽
Vol 20
(27)
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pp. 18200-18206
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Keyword(s):
Keyword(s):
2019 ◽
Vol 75
(5)
◽
pp. 409-414
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Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices
2007 ◽
Vol 28
(1)
◽
pp. 14-16
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