Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation

2006 ◽  
Author(s):  
Y. Nishida ◽  
T. Yamashita ◽  
S. Yamanari ◽  
M. Higashi ◽  
K. Shiga ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Performance Enhancement ◽  
High K

Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

2004 ◽  
Vol 84 (15) ◽  
pp. 2868-2870 ◽  
Author(s):  
Chihoon Lee ◽  
Jihoon Choi ◽  
Moonju Cho ◽  
Doo Seok Jeong ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
High K ◽  
Doping Effects ◽  
Al2o3 Films ◽  
High K Gate Dielectric

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FD15 ◽  
Author(s):  
Takumi Katoh ◽  
Ryo Matsumura ◽  
Ryotaro Takaguchi ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Ion Implantation ◽  
Performance Enhancement ◽  
Low Energy

Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- $k$ Spacer for Low Power Applications

2013 ◽  
Vol 60 (1) ◽  
pp. 63-69 ◽  
Author(s):  
Kalyan Koley ◽  
Arka Dutta ◽  
Binit Syamal ◽  
Samar K. Saha ◽  
Chandan Kumar Sarkar
Keyword(s):  
Low Power ◽  
Performance Enhancement ◽  
High K ◽  
Rf Performance

Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF2 ion implantation

2017 ◽  
Author(s):  
T. Katoh ◽  
R. Matsumura ◽  
R. Takaguchi ◽  
M. Takenaka ◽  
S. Takagi
Keyword(s):  
Ion Implantation ◽  
Performance Enhancement ◽  
Low Energy

Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High-\(k\) /Metal Gate pMOSFETs

2014 ◽  
Vol 35 (9) ◽  
pp. 954-956 ◽  
Author(s):  
Tsung-Hsien Kao ◽  
Osbert Cheng ◽  
Shoou-Jinn Chang ◽  
San-Lein Wu ◽  
Chung-Yi Wu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Aluminum Ion ◽  
Noise Characteristics ◽  
High K

Performance Enhancement of Metal Floating Gate Memory by Using a Bandgap Engineered High-k Tunneling Barrier

2016 ◽  
Vol 72 (2) ◽  
pp. 51-55
Author(s):  
D. Jiang ◽  
L. Jin ◽  
Z. Xia ◽  
G. Chen ◽  
X. Zou ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Floating Gate ◽  
Tunneling Barrier ◽  
High K ◽  
Floating Gate Memory
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