Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394)

Monte Carlo simulation of electromigration in polycrystalline metal stripes

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791304 ◽

1999 ◽

Author(s):

S. Di Pascoli ◽

G. Iannaccone

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Polycrystalline Metal

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Impact of failure criteria on electromigration of W-plug contact

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791319 ◽

1999 ◽

Author(s):

Guo Qiang ◽

Lo Keng Foo ◽

Zeng Xu ◽

Liu Xu ◽

Yao Pei ◽

...

Keyword(s):

Failure Criteria

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Automatic DRAM cell location in the SEM

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791315 ◽

1999 ◽

Cited By ~ 1

Author(s):

J.T.L. Thong ◽

Y. Zhu ◽

J.C.H. Phang

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A latch-up immunized lateral trench-gate conductivity modulated power transistor

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791328 ◽

1999 ◽

Author(s):

Jun Cai ◽

Keng Foo Lo ◽

J.K.O. Sin

Keyword(s):

Power Transistor ◽

Latch Up

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The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791324 ◽

1999 ◽

Cited By ~ 3

Author(s):

D. Qian ◽

D.J. Dumin

Keyword(s):

Electric Field ◽

Oxide Thickness ◽

Silicon Oxides ◽

Oxide Breakdown ◽

Field Oxide

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Laser voltage probe (LVP): a novel optical probing technology for flip-chip packaged microprocessors

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791222 ◽

1999 ◽

Cited By ~ 2

Author(s):

Wai Mun Yee ◽

M. Paniccia ◽

T. Eiles ◽

V. Rao

Keyword(s):

Flip Chip ◽

Optical Probing ◽

Voltage Probe

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The effect of nitrogen pre-annealing on the sidewall oxidation of WSi/sub x/ and on the related electrical properties of WSi/sub x//poly Si gate structure

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791293 ◽

1999 ◽

Author(s):

Dae-Hwan Kang ◽

Hyeon-Soo Kim ◽

Myung-Jun Chung ◽

Kwang-Ho Ahn ◽

Sang-Tae Chung ◽

...

Keyword(s):

Electrical Properties ◽

Gate Structure

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Characterization and application of highly sensitive infra-red emission microscopy for microprocessor backside failure analysis

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791316 ◽

1999 ◽

Cited By ~ 2

Author(s):

Loh Ter Hoe ◽

Yee Wai Mun ◽

Chew Yin Yan

Keyword(s):

Failure Analysis ◽

Red Emission ◽

Highly Sensitive ◽

Infra Red ◽

Emission Microscopy

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Excellent quality ultra-thin oxides prepared by room temperature anodic oxidation

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791295 ◽

1999 ◽

Cited By ~ 1

Author(s):

J.S. Liu ◽

M.C. Chiang ◽

C.L. Chen ◽

T.Y. Huang

Keyword(s):

Anodic Oxidation ◽

Room Temperature ◽

Excellent Quality

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Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791313 ◽

1999 ◽

Author(s):

J.M.P. Yue ◽

W.K. Chim ◽

B.J. Cho ◽

D.S.H. Chan ◽

W.H. Qin ◽

...

Keyword(s):

Channel Width ◽

Hot Carrier ◽

Width Effect ◽

Hot Carrier Degradation

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Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Monte Carlo simulation of electromigration in polycrystalline metal stripes

Impact of failure criteria on electromigration of W-plug contact

Automatic DRAM cell location in the SEM

A latch-up immunized lateral trench-gate conductivity modulated power transistor

The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown

Laser voltage probe (LVP): a novel optical probing technology for flip-chip packaged microprocessors

The effect of nitrogen pre-annealing on the sidewall oxidation of WSi/sub x/ and on the related electrical properties of WSi/sub x//poly Si gate structure

Characterization and application of highly sensitive infra-red emission microscopy for microprocessor backside failure analysis

Excellent quality ultra-thin oxides prepared by room temperature anodic oxidation

Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

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Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Monte Carlo simulation of electromigration in polycrystalline metal stripes

Impact of failure criteria on electromigration of W-plug contact

Automatic DRAM cell location in the SEM

A latch-up immunized lateral trench-gate conductivity modulated power transistor

The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown

Laser voltage probe (LVP): a novel optical probing technology for flip-chip packaged microprocessors

The effect of nitrogen pre-annealing on the sidewall oxidation of WSi/sub x/ and on the related electrical properties of WSi/sub x//poly Si gate structure

Characterization and application of highly sensitive infra-red emission microscopy for microprocessor backside failure analysis

Excellent quality ultra-thin oxides prepared by room temperature anodic oxidation

Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394)
Latest Publications