2017 International Conference of Microelectronic Test Structures (ICMTS)
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9781509036158
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Electromechanical testing of ZnO thin films under high uniaxial strain

2017 ◽  
Author(s):  
Romain Tuyaerts ◽  
Jean-Pierre Raskin ◽  
Joris Proost
Keyword(s):  
Thin Films ◽  
Uniaxial Strain ◽  
Zno Thin Films

Detailed characterization and critical discussion of series resistance in graphene-metal contacts

2017 ◽  
Author(s):  
Stefano Venica ◽  
Francesco Driussi ◽  
Amit Gahoi ◽  
Vikram Passi ◽  
Pierpaolo Palestri ◽  
...  
Keyword(s):  
Series Resistance ◽  
Critical Discussion ◽  
Metal Contacts ◽  
Detailed Characterization

DC and RF characterization of RF MOSFET embedding structure

2017 ◽  
Author(s):  
Atsushi Takeshige ◽  
Kosuke Katayama ◽  
Shuhei Amakawa ◽  
Kyoya Takano ◽  
Takeshi Yoshida ◽  
...  

Design of a Broadband CMOS RF Power Amplifier to establish device-circuit aging correlations

2017 ◽  
Author(s):  
E. Barajas ◽  
D. Mateo ◽  
X. Aragones ◽  
A. Crespo-Yepes ◽  
R. Rodriguez ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Circuit Aging ◽  
Cmos Rf

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

2017 ◽  
Author(s):  
Matthias Bucher ◽  
Aristeidis Nikolaou ◽  
Nikolaos Mavredakis ◽  
Nikolaos Makris ◽  
Mathieu Coustans ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT

2017 ◽  
Author(s):  
Iliass Nifa ◽  
Charles Leroux ◽  
Alphonse Torres ◽  
Matthew Charles ◽  
Gilles Reimbold ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Doping Level ◽  
Gan Buffer Layer

Input capacitance determination of power MOSFETs from switching trajectories

2017 ◽  
Author(s):  
Kazuki Oishi ◽  
Michihiro Shintani ◽  
Masayuki Hiromoto ◽  
Takashi Sato
Keyword(s):  
Power Mosfets ◽  
Input Capacitance
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