2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)
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Published By IEEE

9781479973088, 9781479972746

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049510 ◽

2014 ◽

Cited By ~ 4

Author(s):

J. Franco ◽

B. Kaczer ◽

J. Roussel ◽

M. Cho ◽

T. Grasser ◽

...

Keyword(s):

High Mobility ◽

High Mobility Channel

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Frequency response of stress-effects on CMOS power amplifiers

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049515 ◽

2014 ◽

Author(s):

A. Cattaneo ◽

S. Pinarello ◽

J.-E. Mueller ◽

R. Weigel

Keyword(s):

Frequency Response ◽

Power Amplifiers ◽

Stress Effects

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Physical modeling of hot-carrier degradation in nLDMOS transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049511 ◽

2014 ◽

Cited By ~ 4

Author(s):

Y. Wimmer ◽

S. Tyaginov ◽

F. Rudolf ◽

K. Rupp ◽

M. Bina ◽

...

Keyword(s):

Physical Modeling ◽

Hot Carrier ◽

Hot Carrier Degradation

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Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049520 ◽

2014 ◽

Cited By ~ 7

Author(s):

Vamsi Putcha ◽

Erik Bury ◽

Pieter Weckx ◽

Jacopo Franco ◽

Ben Kaczer ◽

...

Keyword(s):

On Chip

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Diagnosis of resistive-open defects due to electromigration and stress-induced voiding in an SRAM array

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049521 ◽

2014 ◽

Cited By ~ 3

Author(s):

Woongrae Kim ◽

Chang-Chih Chen ◽

Linda Milor

Keyword(s):

Open Defects ◽

Resistive Open Defects

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Rapid reliability testing discussion session

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049543 ◽

2014 ◽

Author(s):

Joe McPherson

Keyword(s):

Reliability Testing ◽

Discussion Session

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Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049522 ◽

2014 ◽

Author(s):

D. D. Wang ◽

W. L. Wang ◽

Y. M. Huang ◽

A. Lek ◽

J. Lam ◽

...

Keyword(s):

Ftir Spectroscopy ◽

Failure Mechanism ◽

Process Improvement ◽

Dielectric Breakdown ◽

Time Dependent ◽

Mechanism Analysis ◽

Spectroscopy Study ◽

Time Dependent Dielectric Breakdown ◽

Low K

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Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049535 ◽

2014 ◽

Cited By ~ 2

Author(s):

Karsten Beckmann ◽

Josh Holt ◽

Jihan Capulong ◽

Sarah Lombardo ◽

Nathaniel C. Cady ◽

...

Keyword(s):

Current Control ◽

Fully Integrated

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Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049531 ◽

2014 ◽

Author(s):

D. D. Nguyen ◽

C. Kouhestani ◽

K. E. Kambour ◽

G. Bersuker ◽

R. A. B. Devine

Keyword(s):

Duty Cycle ◽

Room Temperature

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Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) ◽

10.1109/iirw.2014.7049517 ◽

2014 ◽

Cited By ~ 2

Author(s):

J. Ocker ◽

S. Kupke ◽

S. Slesazeck ◽

T. Mikolajick ◽

E. Erben ◽

...

Keyword(s):

Electronic Properties ◽

Trap States ◽

Metal Gate ◽

High K

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2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Frequency response of stress-effects on CMOS power amplifiers

Physical modeling of hot-carrier degradation in nLDMOS transistors

Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability

Diagnosis of resistive-open defects due to electromigration and stress-induced voiding in an SRAM array

Rapid reliability testing discussion session

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control

Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS

Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)
Latest Publications