1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

2003 ◽

Author(s):

J. Allam ◽

C.L. Yuca ◽

J.R.A. Cleaver

Keyword(s):

High Speed ◽

Active Devices ◽

Electro Optic

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Comparison of advanced transistor technologies with regard to their noise figures

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821472 ◽

2003 ◽

Author(s):

A. Pascht ◽

M. Reimann ◽

M. Berroth

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Adaptive ferroelectric phase shifters for phased array antenna

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821482 ◽

2003 ◽

Author(s):

Peng Thian Teo ◽

K.A. Jose ◽

Y.B. Gan ◽

V.K. Varadan

Keyword(s):

Phased Array ◽

Ferroelectric Phase ◽

Phase Shifters ◽

Array Antenna ◽

Phased Array Antenna

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Electric field gradient dependence of excess avalanche noise

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821490 ◽

2003 ◽

Author(s):

C.H. Tan ◽

S.A. Plimmer ◽

J.P.R. David ◽

G.J. Rees ◽

R.C. Tozer ◽

...

Keyword(s):

Electric Field ◽

Electric Field Gradient ◽

Field Gradient

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Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821478 ◽

2003 ◽

Cited By ~ 4

Author(s):

D.R. Webster ◽

A. Rezazadeh ◽

M. Sotoodeh ◽

A. Khalid ◽

Z. Hu ◽

...

Keyword(s):

Nonlinear Behaviour

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Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge/sup +/ implantation

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821494 ◽

2003 ◽

Cited By ~ 1

Author(s):

M. Mitchell ◽

S. Nigrin ◽

F. Cristiano ◽

P. Ashburn ◽

P. Hemment

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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Complex relative permittivity measurement of ceramics by Fabry-Perot resonator in millimeter frequency range

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821485 ◽

2003 ◽

Author(s):

Y. Itoh ◽

Y. Higashida

Keyword(s):

Relative Permittivity ◽

Frequency Range ◽

Permittivity Measurement ◽

Fabry Perot

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High power microwave SiC MESFET technology

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821462 ◽

2003 ◽

Cited By ~ 5

Author(s):

K.P. Hilton ◽

M.J. Uren ◽

D.G. Hayes ◽

P.J. Wilding ◽

H.K. Johnson ◽

...

Keyword(s):

High Power ◽

High Power Microwave ◽

Power Microwave

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An OEMS study of trap states at the active layer interface with the substrate in ion implanted GaAs MESFETs

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821483 ◽

2003 ◽

Author(s):

Chi-Hsin Chiu ◽

J.G. Swanson

Keyword(s):

Active Layer ◽

Trap States ◽

Layer Interface ◽

Ion Implanted

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Rigorous study of near and far fields for spot-size converted semiconductor lasers

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) ◽

10.1109/edmo.1999.821496 ◽

2003 ◽

Author(s):

B.M.A. Rahman ◽

P. Arasaratnam ◽

M. Kemper ◽

T. Wongcharoen ◽

M. Meyer ◽

...

Keyword(s):

Semiconductor Lasers ◽

Spot Size ◽

Far Fields ◽

Rigorous Study

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1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Quantitative electro-optic sampling for high-speed characterisation of passive and active devices

Comparison of advanced transistor technologies with regard to their noise figures

Adaptive ferroelectric phase shifters for phased array antenna

Electric field gradient dependence of excess avalanche noise

Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs

Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge/sup +/ implantation

Complex relative permittivity measurement of ceramics by Fabry-Perot resonator in millimeter frequency range

High power microwave SiC MESFET technology

An OEMS study of trap states at the active layer interface with the substrate in ion implanted GaAs MESFETs

Rigorous study of near and far fields for spot-size converted semiconductor lasers

Export Citation Format

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Quantitative electro-optic sampling for high-speed characterisation of passive and active devices

Comparison of advanced transistor technologies with regard to their noise figures

Adaptive ferroelectric phase shifters for phased array antenna

Electric field gradient dependence of excess avalanche noise

Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs

Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge/sup +/ implantation

Complex relative permittivity measurement of ceramics by Fabry-Perot resonator in millimeter frequency range

High power microwave SiC MESFET technology

An OEMS study of trap states at the active layer interface with the substrate in ion implanted GaAs MESFETs

Rigorous study of near and far fields for spot-size converted semiconductor lasers

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)
Latest Publications