Rigorous study of near and far fields for spot-size converted semiconductor lasers

Biological ultrastructures have been extensively studied with the scanning electron microscope (SEM) for the past 12 years mainly because this instrument offers accurate and reproducible high resolution images of cell shapes, provided the cells are dried in ways which will spare them the damage which would be caused by air drying. This can be achieved by several techniques among which the critical point drying technique of T. Anderson has been, by far, the most reproducibly successful. Many biologists, however, have been interpreting SEM micrographs in terms of an exclusive secondary electron imaging (SEI) process in which the resolution is primarily limited by the spot size of the primary incident beam. in fact, this is not the case since it appears that high resolution, even on uncoated samples, is probably compromised by the emission of secondary electrons of much more complex origin.When an incident primary electron beam interacts with the surface of most biological samples, a large percentage of the electrons penetrate below the surface of the exposed cells.

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A High Resolution Scanning Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100101529 ◽

1968 ◽

Vol 26 ◽

pp. 356-357

Author(s):

A. V. Crewe ◽

J. Wall ◽

L. M. Welter

Keyword(s):

High Resolution ◽

Field Emission ◽

Spherical Aberration ◽

Focal Length ◽

Spot Size ◽

Emission Source ◽

Field Of View ◽

Scanning Microscope ◽

Magnetic Lens ◽

High Quality

A scanning microscope using a field emission source has been described elsewhere. This microscope has now been improved by replacing the single magnetic lens with a high quality lens of the type described by Ruska. This lens has a focal length of 1 mm and a spherical aberration coefficient of 0.5 mm. The final spot size, and therefore the microscope resolution, is limited by the aberration of this lens to about 6 Å.The lens has been constructed very carefully, maintaining a tolerance of + 1 μ on all critical surfaces. The gun is prealigned on the lens to form a compact unit. The only mechanical adjustments are those which control the specimen and the tip positions. The microscope can be used in two modes. With the lens off and the gun focused on the specimen, the resolution is 250 Å over an undistorted field of view of 2 mm. With the lens on,the resolution is 20 Å or better over a field of view of 40 microns. The magnification can be accurately varied by attenuating the raster current.

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Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088567 ◽

1991 ◽

Vol 49 ◽

pp. 850-851

Author(s):

F. A. Ponce ◽

R. L. Thornton ◽

G. B. Anderson

Keyword(s):

Semiconductor Lasers ◽

Wide Bandgap ◽

Semiconductor Diode ◽

Visible Range ◽

P System ◽

Misfit Dislocations ◽

Lattice Match ◽

Semiconductor Diode Laser ◽

Thin Film Semiconductors ◽

Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

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Image registration with a computer driven S.T.E.M.

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107630 ◽

1978 ◽

Vol 36 (1) ◽

pp. 98-99

Author(s):

A.M.H. Schepman ◽

J.A.P. van der Voort ◽

J.E. Mellema

Keyword(s):

Spot Size ◽

Scanning Transmission Electron Microscope ◽

Small Computer ◽

Structural Studies ◽

Area Of Interest ◽

Transmission Electron ◽

Scanning Transmission ◽

Specimen Area ◽

On Line ◽

Minimum Distances

A Scanning Transmission Electron Microscope (STEM) was coupled to a small computer. The system (see Fig. 1) has been built using a Philips EM400, equipped with a scanning attachment and a DEC PDP11/34 computer with 34K memory. The gun (Fig. 2) consists of a continuously renewed tip of radius 0.2 to 0.4 μm of a tungsten wire heated just below its melting point by a focussed laser beam (1). On-line operation procedures were developped aiming at the reduction of the amount of radiation of the specimen area of interest, while selecting the various imaging parameters and upon registration of the information content. Whereas the theoretical limiting spot size is 0.75 nm (2), routine resolution checks showed minimum distances in the order 1.2 to 1.5 nm between corresponding intensity maxima in successive scans. This value is sufficient for structural studies of regular biological material to test the performance of STEM over high resolution CTEM.

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Ultra-spatially resolved synchrotron powered FT-IR microspectroscopy of individual cells of biological material

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100140798 ◽

1995 ◽

Vol 53 ◽

pp. 884-885

Author(s):

David L. Wetzel ◽

John A. Reffner ◽

Gwyn P. Williams

Keyword(s):

Thermal Noise ◽

Spot Size ◽

Acquisition Time ◽

Thermal Source ◽

Signal To Noise ◽

Spatially Resolved ◽

Good Spatial Resolution ◽

Small Spot ◽

Ft Ir ◽

Ir Microspectroscopy

Synchrotron radiation is 100 to 1000 times brighter than a thermal source such as a globar. It is not accompanied with thermal noise and it is highly directional and nondivergent. For these reasons, it is well suited for ultra-spatially resolved FT-IR microspectroscopy. In efforts to attain good spatial resolution in FT-IR microspectroscopy with a thermal source, a considerable fraction of the infrared beam focused onto the specimen is lost when projected remote apertures are used to achieve a small spot size. This is the case because of divergence in the beam from that source. Also the brightness is limited and it is necessary to compromise on the signal-to-noise or to expect a long acquisition time from coadding many scans. A synchrotron powered FT-IR Microspectrometer does not suffer from this effect. Since most of the unaperatured beam’s energy makes it through even a 12 × 12 μm aperture, that is a starting place for aperture dimension reduction.

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Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138592 ◽

1995 ◽

Vol 53 ◽

pp. 444-445

Author(s):

S. Hillyard ◽

Y.-P. Chen ◽

J.D. Reed ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

Electron Diffraction ◽

Semiconductor Lasers ◽

Quantum Wire ◽

Quantum Wires ◽

Convergent Beam Electron Diffraction ◽

Zero Order ◽

Beam Electron ◽

Local Lattice ◽

Device Applications ◽

Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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{10} edge dislocations in YSZ films grown on (100)MgO by PLD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170384 ◽

1994 ◽

Vol 52 ◽

pp. 530-531

Author(s):

Jason R. Heffelfinger ◽

C. Barry Carter

Keyword(s):

Thin Films ◽

Semiconductor Lasers ◽

Vapor Deposition ◽

Substrate Surface ◽

Laser System ◽

Average Energy ◽

Target Material ◽

Chemical Vapor ◽

Buffer Layers ◽

Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

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