Reduction of threading dislocation density using in-situ SiNx interlayers

ABSTRACTThe objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.

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In Situ Study of Isothermal Strain Relaxation in Si-Ge Heteroepitaxial Films Using Substrate Curvature Measurements

MRS Proceedings ◽

10.1557/proc-239-395 ◽

1991 ◽

Vol 239 ◽

Cited By ~ 4

Author(s):

Véronique T. Gillard ◽

David B. Noble ◽

William D. Nix

Keyword(s):

Dislocation Density ◽

Laser Scanning ◽

Isothermal Annealing ◽

Strain Relaxation ◽

Threading Dislocation ◽

Relaxation Measurements ◽

Threading Dislocation Density ◽

Device Applications ◽

Curvature Measurements

ABSTRACTUnderstanding die kinetics and mechanisms of strain relaxation in Si-Ge heteroepitaxial films is pertinent to several device applications. In this paper we present a method for determining the evolution of the mobile dislocation density with time during the course of strain relaxation taking place in an isothermal annealing experiment.Wafer curvature measurements using a laser scanning technique are used to determine the elastic strain after growth in films of variable thickness and to follow the strain relaxation during isothermal annealing experiments. By coupling the strain relaxation measurements with previous TEM measurements of dislocation velocities in this system, the mobile threading dislocation density and its evolution with time are determined.

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Drastic Reduction of Threading Dislocation Density of AlGaN on SiC Wafer by Using Highly-Si-Incorporated AlGaN Superlattice

MRS Proceedings ◽

10.1557/proc-639-g1.3 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 2

Author(s):

Hideki Hirayama ◽

Makoto Ainoya ◽

Atsuhiro Kinoshita ◽

Akira Hirata ◽

Yoshinobu Aoyagi

Keyword(s):

Dislocation Density ◽

Threading Dislocation ◽

Drastic Reduction ◽

Organic Vapor ◽

Threading Dislocation Density ◽

Metal Organic ◽

Total Growth ◽

Sic Wafer ◽

Algan Buffer

ABSTRACTA new in-situ technique to reduce threading dislocation density (TDD) within sub- micron growth is demonstrated by using metal-organic vapor-phase epitaxy (MOVPE). We achieved drastic reduction of TDD of AlGaN buffer on SiC substrate by inserting highly-Si- incorporated AlGaN/undoped AlGaN superlattice (SL). TDD of AlGaN was decreased from 2×1010 to 7×107 cm−2 by inserting the SL with the total growth thickness of 0.8νm. Si incorporation in AlGaN SL was estimated to be 1.2×1020 cm−3. This technique is exactly in- situ process without complicated fabrication processes, and the surface is kept flat throughout the total growth. This method is especially useful on SiC wafer in order to prevent cracks with thin growth layer. We confirmed the similar effects for GaN and AlGaN buffer on sapphire substrates.

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High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

MRS Proceedings ◽

10.1557/opl.2012.1028 ◽

2012 ◽

Vol 1432 ◽

Cited By ~ 2

Author(s):

Ryan M. France ◽

Myles A. Steiner

Keyword(s):

Solar Cells ◽

Active Region ◽

Dislocation Density ◽

Dark Current ◽

Degradation Mechanism ◽

Control Cell ◽

High Irradiance ◽

Threading Dislocation ◽

Threading Dislocation Density ◽

Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

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Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Journal of Applied Physics ◽

10.1063/5.0032454 ◽

2020 ◽

Vol 128 (21) ◽

pp. 215305

Author(s):

L. Becker ◽

P. Storck ◽

T. Schulz ◽

M. H. Zoellner ◽

L. Di Gaspare ◽

...

Keyword(s):

Dislocation Density ◽

Relaxation Mechanism ◽

Threading Dislocation ◽

Dislocation Source ◽

Threading Dislocation Density

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Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.115501 ◽

2015 ◽

Vol 54 (11) ◽

pp. 115501 ◽

Cited By ~ 6

Author(s):

Motoaki Iwaya ◽

Taiji Yamamoto ◽

Daisuke Iida ◽

Yasunari Kondo ◽

Mihoko Sowa ◽

...

Keyword(s):

Dislocation Density ◽

Misfit Dislocation ◽

Threading Dislocation ◽

Threading Dislocation Density ◽

Dislocation Formation

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Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction

physica status solidi (a) ◽

10.1002/pssa.201532427 ◽

2015 ◽

Vol 213 (1) ◽

pp. 96-101

Author(s):

G. Calabrese ◽

S. Baricordi ◽

P. Bernardoni ◽

D. De Salvador ◽

M. Ferroni ◽

...

Keyword(s):

Porous Silicon ◽

Dislocation Density ◽

Threading Dislocation ◽

Threading Dislocation Density

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Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

MRS Proceedings ◽

10.1557/proc-378-141 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 2

Author(s):

G. Kissinger ◽

T. Morgenstern ◽

G. Morgenstern ◽

H. B. Erzgräber ◽

H. Richter

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Atomic Force Microscopy ◽

Dislocation Density ◽

Threading Dislocation ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Dislocation Densities ◽

Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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