2006 IEEE International Reliability Physics Symposium Proceedings
Latest Publications

TOTAL DOCUMENTS

181

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780394984

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251241 ◽

2006 ◽

Cited By ~ 1

Author(s):

Stefan Schwantes ◽

Josef Furthaler ◽

Bernd Schauwecker ◽

Franz Dietz ◽

Michael Graf ◽

...

Keyword(s):

Breakdown Voltage ◽

Back Gate ◽

Gate Effect ◽

Soi Devices ◽

State Breakdown

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Detection of Electron Trap Generation due to Constant Voltage Stress on High-κ Gate Stacks

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251211 ◽

2006 ◽

Cited By ~ 10

Author(s):

C.d. Young ◽

S. Nadkarni ◽

D. Heh ◽

H.R. Harris ◽

R. Choi ◽

...

Keyword(s):

Electron Trap ◽

Constant Voltage ◽

Gate Stacks ◽

Voltage Stress

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Conference committee

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251362 ◽

2006 ◽

Keyword(s):

Conference Committee

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Mechanism of Gradual Increase of Gate Current in High-K Gate Dielectrics and Its Application to Reliability Assessment

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251215 ◽

2006 ◽

Cited By ~ 8

Author(s):

Kenji Okada ◽

Tsuyoshi Horikawa ◽

Hideki Satake ◽

Hiroyuki Ota ◽

Arito Ogawa ◽

...

Keyword(s):

Gate Dielectrics ◽

Gradual Increase ◽

Reliability Assessment ◽

Gate Current ◽

High K

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Switching Time Extraction of CMOS Gates using Time-Resolved Emission (TRE)

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251280 ◽

2006 ◽

Cited By ~ 6

Author(s):

Franco Stellari ◽

Alberto Tosi ◽

Peilin Song

Keyword(s):

Switching Time ◽

Time Resolved

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Large-Scale Time Characterization and Analysis of PBTI In HFO2/Metal Gate Stacks

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251212 ◽

2006 ◽

Cited By ~ 18

Author(s):

J. Mitard ◽

X. Garros ◽

L.p. Nguyen ◽

C. Leroux ◽

G. Ghibaudo ◽

...

Keyword(s):

Large Scale ◽

Gate Stacks ◽

Metal Gate

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A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251190 ◽

2006 ◽

Cited By ~ 102

Author(s):

F. Chen ◽

O. Bravo ◽

K. Chanda ◽

P. McLaughlin ◽

T. Sullivan ◽

...

Keyword(s):

Model Development ◽

Lifetime Model ◽

Low K ◽

Comprehensive Study

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Hot Carrier Degradation in a Class of Radio Frequency n-Channel LDMOS Transistors

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251240 ◽

2006 ◽

Cited By ~ 6

Author(s):

S. Manzini

Keyword(s):

Radio Frequency ◽

Hot Carrier ◽

Hot Carrier Degradation

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Stable and Reliable Q-Factor in Resonant MEMS with Getter Film

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251254 ◽

2006 ◽

Cited By ~ 6

Author(s):

G. Longoni ◽

A. Conte ◽

M. Moraja ◽

A. Fourrier

Keyword(s):

Q Factor

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Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251284 ◽

2006 ◽

Cited By ~ 12

Author(s):

Alberto Tosi ◽

Franco Stellari ◽

Andrea Pigozzi ◽

Giulio Marchesi ◽

Franco Zappa

Keyword(s):

Hot Carrier ◽

Scaled Cmos

Download Full-text

2006 IEEE International Reliability Physics Symposium ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

Detection of Electron Trap Generation due to Constant Voltage Stress on High-κ Gate Stacks

Conference committee

Mechanism of Gradual Increase of Gate Current in High-K Gate Dielectrics and Its Application to Reliability Assessment

Switching Time Extraction of CMOS Gates using Time-Resolved Emission (TRE)

Large-Scale Time Characterization and Analysis of PBTI In HFO2/Metal Gate Stacks

A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development

Hot Carrier Degradation in a Class of Radio Frequency n-Channel LDMOS Transistors

Stable and Reliable Q-Factor in Resonant MEMS with Getter Film

Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics

2006 IEEE International Reliability Physics Symposium Proceedings
Latest Publications