Charge Trapping in SiO2

Author(s):  
D. R. Young
Keyword(s):  

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).



2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  


2014 ◽  
Vol 26 (45) ◽  
pp. 7555-7560 ◽  
Author(s):  
Shota Nunomura ◽  
Xiaozhou Che ◽  
Stephen R. Forrest


2021 ◽  
pp. 2102087
Author(s):  
Se Gyo Han ◽  
Hansol Lee ◽  
Wookjin Choi ◽  
Dongki Lee ◽  
Seunghyun Kim ◽  
...  


Author(s):  
Shan Deng ◽  
Zhouhang Jiang ◽  
Sourav Dutta ◽  
Huacheng Ye ◽  
Wriddhi Chakraborty ◽  
...  


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015221
Author(s):  
Protyush Sahu ◽  
Jun-Yang Chen ◽  
Jian-Ping Wang


Author(s):  
Jie Lv ◽  
Hua Tang ◽  
Jiaming Huang ◽  
Cenqi Yan ◽  
Kuan Liu ◽  
...  

Due to the barrierless free charge generation, low charge trapping, and high charge mobilities, the PM6:Y6 organic solar cell (OSC) achieves excellent power conversion efficiency (PCE) of 15.7%. However, the...



2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejian Ma ◽  
Fei Zhang ◽  
Zhaodong Chu ◽  
Ji Hao ◽  
Xihan Chen ◽  
...  

AbstractThe outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.



Author(s):  
Evan C. Plunkett ◽  
Qingyang Zhang ◽  
Howard E. Katz ◽  
Daniel H. Reich


Sign in / Sign up

Export Citation Format

Share Document