Thermochemical Characterization of SiC Whiskers in A12O3 Matrices

Author(s):  
Robert A. Marra ◽  
Donald J. Bray
Keyword(s):  
2005 ◽  
Vol 287 ◽  
pp. 200-205 ◽  
Author(s):  
Ji Yeon Park ◽  
S.M. Kang ◽  
Weon Ju Kim ◽  
Woo Seog Ryu

To obtain a dense SiCf/SiC composite by the chemical vapor infiltration (CVI) process, whisker growing before matrix filling was applied, which is called the whisker growing assisted CVI process. The whisker growing and matrix filling processes were carried out using MTS (CH3SiCl3) and H2 as source and diluent gases, respectively. Tyranno-SATM was used as a reinforced substrate. Characterizations of SiC whisker grown during the in situ whisker growing process have been investigated. The weight gain rates with the matrix filling time and the density of composites was measured. The flexural strength with the thickness of the pyrolytic carbon (PyC) interlayers has been evaluated. b-SiC whiskers with many stacking faults were grown well in the Tyranno SATM fabrics. Tyranno-SA/SiC composite with a PyC interlayer thickness of 150 nm had a flexural strength of 610 MPa and the density of 2.71 g/cm3.


2020 ◽  
Vol 46 (3) ◽  
pp. 3132-3138 ◽  
Author(s):  
Wenying Zhou ◽  
Wen Yan ◽  
Nan Li ◽  
Yuanbing Li ◽  
Yajie Dai ◽  
...  

2011 ◽  
Vol 236-238 ◽  
pp. 376-380 ◽  
Author(s):  
Su Qiu Jia ◽  
Jin Tong ◽  
Yun Hai Ma

SiC whiskers were prepared through carbonthermal reduction in two steps. Firstly raw rice husks (RHs) were pyrolysed in a graphite vacuum furnace at 460°C for 2 hours and coked rice husks were pyrolysed at 1400°C in argon atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) was employed to characterize the morphology and phase composition of SiC whiskers. The results show that the diameters of SiC whiskers range in 20-200 nm and their lengths are in the range from hundreds of microns to several millimeters. The whiskers are straight and slightly rough and consist of β-SiC crystals with bamboo-like structure. Vapor-solid (VS) mechanism plays a key role at the early stage of SiC formation and VLS mechanism and vapor phase mechanism of the whiskers are involved during the growth of SiC whiskers.


1992 ◽  
Vol 7 (1) ◽  
pp. 148-163 ◽  
Author(s):  
L. Wang ◽  
H. Wada ◽  
L.F. Allard

1988 ◽  
Vol 120 ◽  
Author(s):  
S. C. Farmer ◽  
P. Pirouz ◽  
A. H. Heuer

AbstractA SiC whisker reinforced HIPped RBSN material fabricated with a Y2O3 sintering aid was characterized using TEM. The matrix is > 90% β-Si3 N4 with a Y-Si-O-N glassy phase at the Si3 N4 grain boundaries and about the SiC whiskers. The SiC whisiers are heavily faulted and have a well defined core. Si3 N4 precipitates are observed in the core region after composite fabrication. A preliminary mechanism for the growth of the SiC whisker, based on the VLS mechanism is proposed.


RSC Advances ◽  
2016 ◽  
Vol 6 (23) ◽  
pp. 19626-19631 ◽  
Author(s):  
Junhong Chen ◽  
Yujie Zhang ◽  
Xinmei Hou ◽  
Lei Su ◽  
Huili Fan ◽  
...  

Ultra light SiC whiskers decorated by RuO2 nanoparticles fabricated combining carbon thermal reduction and a hydrothermal route were investigated as novel hybrid supercapacitors with improved performance.


2020 ◽  
Vol 828 ◽  
pp. 154347 ◽  
Author(s):  
Hongyu Xing ◽  
Bin Zou ◽  
Xinfeng Wang ◽  
Yifan Hu ◽  
Chuanzhen Huang ◽  
...  

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