A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

2006 ◽  
Vol 16 (7) ◽  
pp. 975-979 ◽  
Author(s):  
M. Soueidan ◽  
G. Ferro
Keyword(s):  
Single Domain ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

2006 ◽  
Vol 6 (11) ◽  
pp. 2598-2602 ◽  
Author(s):  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Bilal Nsouli ◽  
Mohamad Roumie ◽  
Efstathios Polychroniadis ◽  
...  
Keyword(s):  
Single Domain ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism

2007 ◽  
pp. 187-190
Author(s):  
Maher Soueidan ◽  
Olivier Kim-Hak ◽  
Gabriel Ferro ◽  
P. Chaudouet ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
Single Domain ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

scholarly journals Vapor-Liquid-Solid Growth and Properties of One Dimensional PbO and PbO/SnO2 Nanowires

2022 ◽  
Author(s):  
Nikolaos Kelaidis ◽  
Matthew Zervos ◽  
Nektarios Lathiotakis ◽  
Alexander Chroneos ◽  
Eugenia Tanasă ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Sno2 Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

PbO nanowires have been obtained via a self-catalyzed, vapor-liquid-solid mechanism and the reaction of Pb with O2 between 200°C and 300°C at 10 Pa. These had the form of tapes...

scholarly journals PULSE GROWTH OF THE GAAS NANOWIRES

2021 ◽  
Author(s):  
Alla Nastovjak ◽  
David Shterental ◽  
Nataliya Shwartz
Keyword(s):  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Gaas Nanowire ◽  
Vapor Liquid

The results of the simulation of the GaAs nanowire self-catalyzed growth via vapor-liquid-solid mechanism using various pulse modes are presented in this work.

Synthesis of Aluminum Nitride Whiskers Via a Vapor-Liquid-Solid Process

1998 ◽  
Vol 547 ◽  
Author(s):  
Ying Dai ◽  
Ce-Wen Nan
Keyword(s):  
Carbon Black ◽  
Aluminum Nitride ◽  
Aluminum Powder ◽  
Nitrogen Atmosphere ◽  
Processing Conditions ◽  
Vapor Liquid Solid ◽  
Aluminum Powders ◽  
Sem And Tem ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

AbstractAluminum nitride whiskers were synthesized by nitridation of commercial aluminum powder at 1623K in a nitrogen atmosphere. The starting materials consisted of aluminum and carbon black. The carbon acted as a barrier between aluminum powders during nitridation and was removed by heating in air at 923K. The whiskers were about 0.5-1μm in diameter and 10-20μm in length. The droplets at the whisker tips showed that the whiskers grew via a vapor-liquid-solid mechanism. The morphologies of the whiskers were studied by means of SEM and TEM. The formation of the whiskers depended on the processing conditions.

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

2011 ◽  
Vol 11 (6) ◽  
pp. 2177-2182 ◽  
Author(s):  
J. Lorenzzi ◽  
M. Lazar ◽  
D. Tournier ◽  
N. Jegenyes ◽  
D. Carole ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid
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