Vapor-Liquid-Solid Growth and Properties of One Dimensional PbO and PbO/SnO2 Nanowires

PbO nanowires have been obtained via a self-catalyzed, vapor-liquid-solid mechanism and the reaction of Pb with O2 between 200°C and 300°C at 10 Pa. These had the form of tapes...

Tunable Layer Orientation and Morphology in Vapor–Liquid–Solid Growth of One-Dimensional GeS van der Waals Nanostructures

Chemistry of Materials ◽

10.1021/acs.chemmater.1c00289 ◽

2021 ◽

Author(s):

Eli Sutter ◽

Jacob S. French ◽

Peter Sutter

Keyword(s):

Van Der Waals ◽

Vapor Liquid Solid ◽

One Dimensional ◽

Layer Orientation ◽

A systematic study of the nitridation of SnO2 nanowires grown by the vapor liquid solid mechanism

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.11.063 ◽

2012 ◽

Vol 340 (1) ◽

pp. 28-33 ◽

Cited By ~ 7

Author(s):

Matthew Zervos ◽

Andreas Othonos

Keyword(s):

Systematic Study ◽

Vapor Liquid Solid ◽

Sno2 Nanowires ◽

Optical and gas sensing properties of SnO2 nanowires grown by vapor–liquid–solid mechanism

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-017-7742-4 ◽

2017 ◽

Vol 28 (23) ◽

pp. 17993-18002 ◽

Cited By ~ 2

Author(s):

Muhammad Amin ◽

Muhammad Saeed Akhtar ◽

Khuram Shahzad Ahmad ◽

Yousef Alghamdi ◽

Neerish Revaprasadu ◽

...

Keyword(s):

Gas Sensing ◽

Vapor Liquid Solid ◽

Sensing Properties ◽

Sno2 Nanowires ◽

Gas Sensing Properties ◽

Vapor–Liquid–Solid Growth of One-Dimensional Tin Sulfide (SnS) Nanostructures with Promising Field Emission Behavior

ACS Applied Materials & Interfaces ◽

10.1021/am405039j ◽

2014 ◽

Vol 6 (3) ◽

pp. 2018-2025 ◽

Cited By ~ 56

Author(s):

Sachin R. Suryawanshi ◽

Sambhaji S. Warule ◽

Sandip S. Patil ◽

Kashinath R. Patil ◽

Mahendra A. More

Keyword(s):

Field Emission ◽

Tin Sulfide ◽

Vapor Liquid Solid ◽

One Dimensional ◽

Emission Behavior ◽

Instantaneous vapor-liquid-solid growth of amorphous SiO2 nanowires within a local-equilibrium plasma and the optimized lithiation/delithiation activity

Applied Surface Science ◽

10.1016/j.apsusc.2021.149848 ◽

2021 ◽

Vol 557 ◽

pp. 149848

Author(s):

Wenfei Yang ◽

Xue Zhang ◽

Feirong Huang ◽

Zhongyuan Zhang ◽

Javid Muhammad ◽

...

Keyword(s):

Local Equilibrium ◽

Vapor Liquid Solid ◽

Amorphous Sio2 ◽

Equilibrium Plasma ◽

Sio2 Nanowires ◽

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.323 ◽

2013 ◽

Vol 740-742 ◽

pp. 323-326

Author(s):

Kassem Alassaad ◽

François Cauwet ◽

Davy Carole ◽

Véronique Soulière ◽

Gabriel Ferro

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Carbon Precursor ◽

Growth Limitation ◽

Vapor Liquid Solid ◽

Partial Pressures ◽

Vls Growth ◽

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽

10.3390/nano11071681 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1681

Author(s):

Hadi Hijazi ◽

Vladimir G. Dubrovskii

Keyword(s):

Surface Energy ◽

Continuous Process ◽

Vapor Liquid Solid ◽

Gaas Nanowires ◽

Monolayer Growth ◽

Surface Energetics ◽

Monolayer Expansion ◽

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.