scholarly journals Ultrawide-Bandgap Semiconductors: Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors (Adv. Funct. Mater. 9/2019)

2019 ◽  
Vol 29 (9) ◽  
pp. 1970057 ◽  
Author(s):  
Chao Xie ◽  
Xing-Tong Lu ◽  
Xiao-Wei Tong ◽  
Zhi-Xiang Zhang ◽  
Feng-Xia Liang ◽  
...  
2019 ◽  
Vol 29 (9) ◽  
pp. 1806006 ◽  
Author(s):  
Chao Xie ◽  
Xing-Tong Lu ◽  
Xiao-Wei Tong ◽  
Zhi-Xiang Zhang ◽  
Feng-Xia Liang ◽  
...  

Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...


2019 ◽  
Vol 30 (9) ◽  
pp. 8445-8448
Author(s):  
Li-Yi Jian ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2459-2466 ◽  
Author(s):  
Rui Cao ◽  
Ye Zhang ◽  
Huide Wang ◽  
Yonghong Zeng ◽  
Jinlai Zhao ◽  
...  

AbstractSolar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.


2009 ◽  
Vol 34 (11) ◽  
pp. 1675 ◽  
Author(s):  
Jie Xing ◽  
Erjia Guo ◽  
Kui-juan Jin ◽  
Huibin Lu ◽  
Juan Wen ◽  
...  

2018 ◽  
Vol 6 (42) ◽  
pp. 11266-11271 ◽  
Author(s):  
Yong Xia ◽  
Guangmei Zhai ◽  
Zhi Zheng ◽  
Linyuan Lian ◽  
Huan Liu ◽  
...  

Strongly quantum confined ZnS quantum dots were synthesized and solar-blind deep ultraviolet photodetectors were fabricated via a solution process.


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