A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

Gallium oxide-based solar-blind ultraviolet photodetectors

2020 ◽  
Vol 35 (2) ◽  
pp. 023001 ◽  
Author(s):  
Xuanhu Chen ◽  
Fang-Fang Ren ◽  
Jiandong Ye ◽  
Shulin Gu
Keyword(s):  
Gallium Oxide ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

Solar-Blind Self-Powered Photodetector Using Solution-Processed Amorphous Core–Shell Gallium Oxide Nanoparticles

2019 ◽  
Vol 11 (42) ◽  
pp. 38921-38928 ◽  
Author(s):  
Somak Mitra ◽  
Yusin Pak ◽  
Bin Xin ◽  
Dhaifallah R. Almalawi ◽  
Nimer Wehbe ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Oxide Nanoparticles ◽  
Core Shell ◽  
Solution Processed ◽  
Solar Blind ◽  
Self Powered

Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts

Nanoscale ◽  
2011 ◽  
Vol 3 (3) ◽  
pp. 1120 ◽  
Author(s):  
Liang Li ◽  
Erwin Auer ◽  
Meiyong Liao ◽  
Xiaosheng Fang ◽  
Tianyou Zhai ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Solar Blind ◽  
Deep Ultraviolet

Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors

2019 ◽  
Vol 30 (9) ◽  
pp. 8445-8448
Author(s):  
Li-Yi Jian ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee
Keyword(s):  
Solar Blind ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

scholarly journals Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2459-2466 ◽  
Author(s):  
Rui Cao ◽  
Ye Zhang ◽  
Huide Wang ◽  
Yonghong Zeng ◽  
Jinlai Zhao ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Pollution Monitoring ◽  
Practical Applications ◽  
Ambient Exposure ◽  
Photoelectric Properties ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Viable Approach ◽  
Ultraviolet Photodetectors

AbstractSolar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.

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