scholarly journals Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2459-2466 ◽  
Author(s):  
Rui Cao ◽  
Ye Zhang ◽  
Huide Wang ◽  
Yonghong Zeng ◽  
Jinlai Zhao ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Pollution Monitoring ◽  
Practical Applications ◽  
Ambient Exposure ◽  
Photoelectric Properties ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Viable Approach ◽  
Ultraviolet Photodetectors

AbstractSolar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

2018 ◽  
Vol 766 ◽  
pp. 601-608 ◽  
Author(s):  
Hao Shen ◽  
Yinong Yin ◽  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Libing Duan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Fast Response ◽  
Gel Method ◽  
Sol Gel Method ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

Realization of cubic ZnMgO photodetectors for UVB applications

2015 ◽  
Vol 3 (2) ◽  
pp. 313-317 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Dark Current ◽  
Response Speed ◽  
Fast Response ◽  
Practical Applications ◽  
High Responsivity

Cubic ZnMgO UVB photodetectors with low dark current, high responsivity and fast response speed are very promising for practical applications.

Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Fast Response ◽  
Large Area ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Vertically Aligned ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

Fast-response amorphous Ga2O3 solar-blind ultraviolet photodetectors tuned by a polar AlN template

2021 ◽  
pp. 1-1
Author(s):  
Ningtao Liu ◽  
Tan Zhang ◽  
Li Chen ◽  
Jinfu Zhang ◽  
Shudong Hu ◽  
...  
Keyword(s):  
Fast Response ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors

2019 ◽  
Vol 30 (9) ◽  
pp. 8445-8448
Author(s):  
Li-Yi Jian ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee
Keyword(s):  
Solar Blind ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors
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