High Electron Mobility in Room-Temperature Discotic Liquid-Crystalline Perylene Diimides

Advanced Materials ◽

10.1002/adma.200500027 ◽

2005 ◽

Vol 17 (21) ◽

pp. 2580-2583 ◽

Author(s):

Z. An ◽

J. Yu ◽

S. C. Jones ◽

S. Barlow ◽

S. Yoo ◽

...

Keyword(s):

Electron Mobility ◽

Liquid Crystalline ◽

Room Temperature ◽

High Electron ◽

High Electron Mobility ◽

Perylene Diimides

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/31/2/001 ◽

1998 ◽

Vol 31 (2) ◽

pp. 159-164 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

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High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Applied Physics Letters ◽

10.1063/1.3596440 ◽

2011 ◽

Vol 98 (22) ◽

pp. 223504 ◽

Author(s):

S. C. Hung ◽

C. W. Chen ◽

C. Y. Shieh ◽

G. C. Chi ◽

R. Fan ◽

...

Keyword(s):

Carbon Monoxide ◽

Electron Mobility ◽

Room Temperature ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Novel Liquid Crystalline Oxadiazole with High Electron Mobility

Advanced Materials ◽

10.1002/(sici)1521-4095(199803)10:5<404::aid-adma404>3.0.co;2-h ◽

1998 ◽

Vol 10 (5) ◽

pp. 404-406 ◽

Author(s):

Hiroaki Tokuhisa ◽

Masanao Era ◽

Tetsuo Tsutsui

Keyword(s):

Electron Mobility ◽

Liquid Crystalline ◽

High Electron ◽

High Electron Mobility

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.4575 ◽

2012 ◽

Vol 12 (8) ◽

pp. 6737-6740 ◽

Author(s):

A. El Moutaouakil ◽

T. Suemitsu ◽

T. Otsuji ◽

D. Coquillat ◽

W. Knap

Keyword(s):

Terahertz Radiation ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Material Systems

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Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

AIP Advances ◽

10.1063/1.4966916 ◽

2016 ◽

Vol 6 (10) ◽

pp. 109903 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

ECS Meeting Abstracts ◽

10.1149/ma2020-01312319mtgabs ◽

2020 ◽

Vol MA2020-01 (31) ◽

pp. 2319-2319

Author(s):

Zhixiang Hu ◽

Jingyao Liu ◽

Licheng Zhou ◽

Long Li ◽

Yunong Zhao ◽

...

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

Gas Detection ◽

High Electron ◽

High Electron Mobility

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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904392 ◽

2002 ◽

Author(s):

Jae-Eung Oh ◽

Jong-Wook Kim

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Inas Quantum Dots ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Solid State Communications ◽

10.1016/0038-1098(96)00223-2 ◽

1996 ◽

Vol 99 (10) ◽

pp. 713-716 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Hyung-Sup Yoon ◽

Chul-Soon Park ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Photoluminescence Studies

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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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