High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Applied Physics Letters ◽

10.1063/1.3596440 ◽

2011 ◽

Vol 98 (22) ◽

pp. 223504 ◽

Author(s):

S. C. Hung ◽

C. W. Chen ◽

C. Y. Shieh ◽

G. C. Chi ◽

R. Fan ◽

...

Keyword(s):

Carbon Monoxide ◽

Electron Mobility ◽

Room Temperature ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

AIP Advances ◽

10.1063/1.4966916 ◽

2016 ◽

Vol 6 (10) ◽

pp. 109903 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904392 ◽

2002 ◽

Author(s):

Jae-Eung Oh ◽

Jong-Wook Kim

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Inas Quantum Dots ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Ultra-High Sensitivity for Lead Ion Detection Beyond the Ideal Nernst Response with AlGaN/GaN High Electron Mobility Transistors (HEMTs)

ECS Transactions ◽

10.1149/08509.0003ecst ◽

2018 ◽

Vol 85 (9) ◽

pp. 3-8

Author(s):

Ching-Yen Hsieh ◽

Yi-Ting Chen ◽

Revathi Sukesan ◽

Yu-Lin Wang

Keyword(s):

Electron Mobility ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

Lead Ion ◽

High Electron ◽

Ion Detection ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence

Journal of Applied Physics ◽

10.1063/1.370823 ◽

1999 ◽

Vol 86 (2) ◽

pp. 914-917 ◽

Author(s):

Steven K. Brierley ◽

Abbas Torabi ◽

Peter S. Lyman

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Precise Determination ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Electron Mobility Transistors ◽

Channel Thickness

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Ultra-High Sensitivity for Lead Ion Detection Beyond the Ideal Nernst Response with AlGaN/GaN High Electron Mobility Transistors (HEMTs)

ECS Meeting Abstracts ◽

10.1149/ma2018-01/25/1483 ◽

2018 ◽

Keyword(s):

Electron Mobility ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

Lead Ion ◽

High Electron ◽

Ion Detection ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

35th International Conference on Infrared, Millimeter, and Terahertz Waves ◽

10.1109/icimw.2010.5612620 ◽

2010 ◽

Author(s):

N. Dyakonova ◽

A. El Fatimy ◽

Y. Meziani ◽

T. Otsuji ◽

D. Coquillat ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Applied Physics Letters ◽

10.1063/5.0031029 ◽

2020 ◽

Vol 117 (26) ◽

pp. 263501

Author(s):

Xin Chen ◽

Yaozong Zhong ◽

Yu Zhou ◽

Hongwei Gao ◽

Xiaoning Zhan ◽

...

Keyword(s):

Energy Level ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap Energy ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0011810jss ◽

2018 ◽

Vol 7 (9) ◽

pp. Q176-Q183 ◽

Author(s):

Yi-Ting Chen ◽

Ching-Yen Hseih ◽

Indu Sarangadharan ◽

Revathi Sukesan ◽

Geng-Yen Lee ◽

...

Keyword(s):

Heavy Metal ◽

Electron Mobility ◽

Metal Ion ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

Heavy Metal Ion ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Ion Detection

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of Applied Physics ◽

10.1063/1.3291101 ◽

2010 ◽

Vol 107 (2) ◽

pp. 024504 ◽

Author(s):

A. El Fatimy ◽

N. Dyakonova ◽

Y. Meziani ◽

T. Otsuji ◽

W. Knap ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Terahertz Sources ◽

Electron Mobility Transistors

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