Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

2011 ◽  
Vol 23 (8) ◽  
pp. 971-974 ◽  
Author(s):  
Young Min Park ◽  
Jürgen Daniel ◽  
Martin Heeney ◽  
Alberto Salleo
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Low Voltage Operation ◽  
Ultrathin Oxide

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

2015 ◽  
Vol 7 (8) ◽  
pp. 4804-4808 ◽  
Author(s):  
Cheng-Yin Wang ◽  
Canek Fuentes-Hernandez ◽  
Jen-Chieh Liu ◽  
Amir Dindar ◽  
Sangmoo Choi ◽  
...  
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Cellulose Nanocrystal ◽  
Organic Field Effect Transistors ◽  
Low Voltage Operation

Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress

2009 ◽  
Vol 95 (22) ◽  
pp. 223302 ◽  
Author(s):  
Xiao-Hong Zhang ◽  
Shree Prakash Tiwari ◽  
Sung-Jin Kim ◽  
Bernard Kippelen
Keyword(s):  
Field Effect ◽  
High Stability ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bias Stress
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