Room temperature fabrication of HfON gate insulator for low-voltage operating pentacene-based organic field-effect transistors

2011 ◽  
Author(s):  
M. Liao ◽  
H. Ishiwara ◽  
S. Ohmi
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors

Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114593-114598 ◽  
Author(s):  
Xue-feng She ◽  
Jingsong Wang ◽  
Qingguo Xue ◽  
Wentao Xu
Keyword(s):  
Rare Earth ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
High K

Raw product of rare-earth ore was found to be good candidate for fabricating high-k gate insulator in field-effect transistors.

Low-voltage Organic Field-effect Transistors with a Gate Insulator of Ta2O5Formed by Sputtering

2004 ◽  
Vol 33 (9) ◽  
pp. 1172-1173 ◽  
Author(s):  
Heisuke Sakai ◽  
Yukio Furukawa ◽  
Eiichi Fujiwara ◽  
Hirokazu Tada
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors

scholarly journals Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

RSC Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 4645-4645
Author(s):  
Xue-feng She ◽  
Jingsong Wang ◽  
Qingguo Xue ◽  
Wentao Xu
Keyword(s):  
Rare Earth ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
High K

Correction for ‘Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors’ by Xue-feng She et al., RSC Adv., 2016, 6, 114593–114598.

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