Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors

2013 ◽  
Vol 26 (10) ◽  
pp. 1559-1564 ◽  
Author(s):  
Lifeng Wang ◽  
Bin Wu ◽  
Jisi Chen ◽  
Hongtao Liu ◽  
Pingan Hu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Domain Size ◽  
Large Domain ◽  
Clean Interface ◽  
Boron Nitride Films

Nanometer-Thick Hexagonal Boron Nitride Films for 2D Field-Effect Transistors

2020 ◽  
Vol 3 (8) ◽  
pp. 7930-7941
Author(s):  
Siddharth Gupta ◽  
Ritesh Sachan ◽  
Jagdish Narayan
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Boron Nitride Films

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3963-3969 ◽  
Author(s):  
Seungho Kim ◽  
Gyuho Myeong ◽  
Jihoon Park ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Black Phosphorus ◽  
Tunnel Barrier

scholarly journals Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

2020 ◽  
Vol 12 (16) ◽  
pp. 18667-18673 ◽  
Author(s):  
Gaurav Pande ◽  
Jyun-Yan Siao ◽  
Wei-Liang Chen ◽  
Chien-Ju Lee ◽  
Raman Sankar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Schottky Barriers

Reversible photo-induced doping in WSe2 field effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7358-7363 ◽  
Author(s):  
Xuyi Luo ◽  
Kraig Andrews ◽  
Tianjiao Wang ◽  
Arthur Bowman ◽  
Zhixian Zhou ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Visible Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Light Illumination ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Low Intensity ◽  
Visible Light Illumination

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm−2).

Extended Gate Ion-Sensitive Field-Effect Transistors Using Al2O3/Hexagonal Boron Nitride Nanolayers for pH Sensing

2019 ◽  
Vol 3 (1) ◽  
pp. 403-408 ◽  
Author(s):  
Wei Wei ◽  
Zhe Zeng ◽  
Wugang Liao ◽  
Wai Kin Chim ◽  
Chunxiang Zhu
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Ph Sensing
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