scholarly journals Organic Transistors: High Performance Field-Effect Ammonia Sensors Based on a Structured Ultrathin Organic Semiconductor Film (Adv. Mater. 25/2013)

2013 ◽  
Vol 25 (25) ◽  
pp. 3500-3500
Author(s):  
Liqiang Li ◽  
Peng Gao ◽  
Martin Baumgarten ◽  
Klaus Müllen ◽  
Nan Lu ◽  
...  
2013 ◽  
Vol 25 (25) ◽  
pp. 3419-3425 ◽  
Author(s):  
Liqiang Li ◽  
Peng Gao ◽  
Martin Baumgarten ◽  
Klaus Müllen ◽  
Nan Lu ◽  
...  

2005 ◽  
Vol 17 (19) ◽  
pp. NA-NA
Author(s):  
D. M. DeLongchamp ◽  
S. Sambasivan ◽  
D. A. Fischer ◽  
E. K. Lin ◽  
P. Chang ◽  
...  

2002 ◽  
Vol 761 ◽  
Author(s):  
Jana Zaumseil ◽  
Takao Someya ◽  
Zhenan Bao ◽  
Yueh-Lin Loo ◽  
Kirk Baldwin ◽  
...  

ABSTRACTLamination of metal-coated elastomeric stamps against thin films of electroactive organics provides non-invasive, high resolution electrical contacts for investigations of charge transport in these materials. This approach uses the features of relief on the stamps to define, with nanometer resolution, the geometry and separation of electrodes that are formed by uniform evaporation of a thin metal film onto the stamp. Soft, room temperature contact of an element of this type with an organic semiconductor film on a gate dielectric and a gate yields a high performance top contact transistor with source/drain electrodes supported by the stamp. We review here our use of this approach to study the electrical properties of the organic semiconductor pentacene in thin film transistors structures. We also introduce a method for using the same techniques and structures to probe transport through organic monolayers.


Nanoscale ◽  
2017 ◽  
Vol 9 (29) ◽  
pp. 10178-10185 ◽  
Author(s):  
Subir Parui ◽  
Mário Ribeiro ◽  
Ainhoa Atxabal ◽  
Roger Llopis ◽  
Fèlix Casanova ◽  
...  

High-performance lateral and vertical organic field-effect transistors are demonstrated based on graphene electrodes and solution-processed N2200 polymers for advanced organic-electronics.


2015 ◽  
Vol 137 (38) ◽  
pp. 12175-12178 ◽  
Author(s):  
Jeong-Il Park ◽  
Jong Won Chung ◽  
Joo-Young Kim ◽  
Jiyoul Lee ◽  
Ji Young Jung ◽  
...  

2020 ◽  
Vol 5 (7) ◽  
pp. 1096-1105 ◽  
Author(s):  
Xiali Zhang ◽  
Wei Deng ◽  
Bei Lu ◽  
Xiaochen Fang ◽  
Xiujuan Zhang ◽  
...  

A uniform and smooth Dif-TES-ADT film with thickness of ∼4.62 nm is achieved within 50 s in 2-inch size through the use of a mixed solvent system. The ultrathin Dif-TES-ADT film-based transistors exhibit a maximum mobility up to 5.54 cm2 V−1 s−1.


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