Graphene as an electrode for solution-processed electron-transporting organic transistors

Nanoscale ◽  
2017 ◽  
Vol 9 (29) ◽  
pp. 10178-10185 ◽  
Author(s):  
Subir Parui ◽  
Mário Ribeiro ◽  
Ainhoa Atxabal ◽  
Roger Llopis ◽  
Fèlix Casanova ◽  
...  

High-performance lateral and vertical organic field-effect transistors are demonstrated based on graphene electrodes and solution-processed N2200 polymers for advanced organic-electronics.

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.


2015 ◽  
Vol 17 (40) ◽  
pp. 26553-26574 ◽  
Author(s):  
Yong Xu ◽  
Chuan Liu ◽  
Dongyoon Khim ◽  
Yong-Young Noh

In this perspective article, we provide a recent overview of the route to realize high-performance printed organic transistors and integrated circuits.


ACS Nano ◽  
2018 ◽  
Vol 12 (4) ◽  
pp. 3938-3946 ◽  
Author(s):  
Yuanyuan Hu ◽  
Zachary D. Rengert ◽  
Caitlin McDowell ◽  
Michael J. Ford ◽  
Ming Wang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hamna F. Iqbal ◽  
Qianxiang Ai ◽  
Karl J. Thorley ◽  
Hu Chen ◽  
Iain McCulloch ◽  
...  

AbstractSolution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we designed the most efficient encapsulation strategy for each device type, which resulted in fabrication of high performance, environmentally and operationally stable small molecule and polymeric transistors with consistent mobility and unparalleled threshold voltage shifts as low as 0.1 V under the application of high bias stress in air.


2007 ◽  
Vol 129 (51) ◽  
pp. 15732-15733 ◽  
Author(s):  
Hideaki Ebata ◽  
Takafumi Izawa ◽  
Eigo Miyazaki ◽  
Kazuo Takimiya ◽  
Masaaki Ikeda ◽  
...  

2019 ◽  
Vol 11 (8) ◽  
pp. 8357-8364 ◽  
Author(s):  
Vivek Raghuwanshi ◽  
Deepak Bharti ◽  
Ajay Kumar Mahato ◽  
Ishan Varun ◽  
Shree Prakash Tiwari

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