Efficient and Color Stable White Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency Over 23%

2018 ◽  
Vol 6 (16) ◽  
pp. 1800354 ◽  
Author(s):  
Heng Zhang ◽  
Qiang Su ◽  
Yizhe Sun ◽  
Shuming Chen
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

High-efficiency quantum dot light-emitting diodes employing lithium salt doped poly(9-vinlycarbazole) as a hole-transporting layer

2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Lithium Salt ◽  
Light Emitting ◽  
Hole Transporting

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.

Near-infrared light emitting diodes using PbSe quantum dots

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54109-54114 ◽  
Author(s):  
Long Yan ◽  
Xinyu Shen ◽  
Yu Zhang ◽  
Tieqiang Zhang ◽  
Xiaoyu Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting

The near-infrared light-emitting diodes using PbSe quantum dots were fabricated with the highest external quantum efficiency of 2.52%, which is comparable to those commercial InGaAsP LEDs and visible quantum dot electroluminescence LEDs.

73-4: Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %

2018 ◽  
Vol 49 (1) ◽  
pp. 977-980 ◽  
Author(s):  
Qiang Su ◽  
Heng Zhang ◽  
Fengtian Xia ◽  
Xiao Wei Sun ◽  
Shuming Chen
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11103-11109 ◽  
Author(s):  
Wenyu Ji ◽  
Huaibin Shen ◽  
Han Zhang ◽  
Zhihui Kang ◽  
Hanzhuang Zhang
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Efficiency Enhancement ◽  
Light Emitting ◽  
Passivating Layer

The interactions between QDs and s-NiO can be largely suppressed through introducing a ultrathin Al2O3passivating layer. This highest current efficiency (external quantum efficiency) of 34.1 cd A−1(8.1%) is achieved.

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