High-efficiency quantum dot light-emitting diodes employing lithium salt doped poly(9-vinlycarbazole) as a hole-transporting layer

2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Lithium Salt ◽  
Light Emitting ◽  
Hole Transporting

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

Non-halogenated solvent-processed highly efficient green Ir(iii) complexes with an external quantum efficiency exceeding 23% for phosphorescent organic light-emitting diodes

2020 ◽  
Vol 8 (37) ◽  
pp. 12959-12967
Author(s):  
Raja Kumaresan ◽  
Athithan Maheshwaran ◽  
Ho-Yeol Park ◽  
Kyungmin Sung ◽  
Jungmin Choi ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
Organic Light

High efficiency green phosphorescent Ir(III) complexes with solubilizing groups introduced to enable non-halogenated solvent-based fabrication of PHOLEDs with high EQE and CE values.

Near-infrared light emitting diodes using PbSe quantum dots

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54109-54114 ◽  
Author(s):  
Long Yan ◽  
Xinyu Shen ◽  
Yu Zhang ◽  
Tieqiang Zhang ◽  
Xiaoyu Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting

The near-infrared light-emitting diodes using PbSe quantum dots were fabricated with the highest external quantum efficiency of 2.52%, which is comparable to those commercial InGaAsP LEDs and visible quantum dot electroluminescence LEDs.

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