Spin‐Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe 2 in Non‐Local Transport Measurements

2019 ◽  
Vol 5 (12) ◽  
pp. 1900334 ◽  
Author(s):  
Joris A. Voerman ◽  
Chuan Li ◽  
Yingkai Huang ◽  
Alexander Brinkman
Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 22958-22962
Author(s):  
Jen-Ru Chen ◽  
Pok Lam Tse ◽  
Ilya N. Krivorotov ◽  
Jia G. Lu

Unique spin–momentum locking in topological surface states of Sb2Te3 nanowires exhibits an unusual symmetry in non-local voltage signal.


Entropy ◽  
2018 ◽  
Vol 20 (10) ◽  
pp. 760 ◽  
Author(s):  
Johan Anderson ◽  
Sara Moradi ◽  
Tariq Rafiq

The numerical solutions to a non-linear Fractional Fokker–Planck (FFP) equation are studied estimating the generalized diffusion coefficients. The aim is to model anomalous diffusion using an FFP description with fractional velocity derivatives and Langevin dynamics where Lévy fluctuations are introduced to model the effect of non-local transport due to fractional diffusion in velocity space. Distribution functions are found using numerical means for varying degrees of fractionality of the stable Lévy distribution as solutions to the FFP equation. The statistical properties of the distribution functions are assessed by a generalized normalized expectation measure and entropy and modified transport coefficient. The transport coefficient significantly increases with decreasing fractality which is corroborated by analysis of experimental data.


2010 ◽  
Vol 79 (7) ◽  
pp. 074708 ◽  
Author(s):  
Hiroshi Kambara ◽  
Tetsuro Matsumoto ◽  
Hiromi Kashiwaya ◽  
Satoshi Kashiwaya ◽  
Hiroshi Yaguchi ◽  
...  

2018 ◽  
Vol 3 (3) ◽  
pp. 110-126 ◽  
Author(s):  
J. Nikl ◽  
M. Holec ◽  
M. Zeman ◽  
M. Kuchařík ◽  
J. Limpouch ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 253-256
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.


1997 ◽  
Vol 39 (12B) ◽  
pp. B173-B188 ◽  
Author(s):  
J D Callen ◽  
M W Kissick
Keyword(s):  

Carbon ◽  
2016 ◽  
Vol 102 ◽  
pp. 470-476 ◽  
Author(s):  
Philip Willke ◽  
Christian Möhle ◽  
Anna Sinterhauf ◽  
Thomas Kotzott ◽  
Hak Ki Yu ◽  
...  

2013 ◽  
Vol 103 (11) ◽  
pp. 111604 ◽  
Author(s):  
J. Baringhaus ◽  
F. Edler ◽  
C. Neumann ◽  
C. Stampfer ◽  
S. Forti ◽  
...  

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