Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
2020 ◽
Vol 6
(3)
◽
pp. 2000098
2019 ◽
Vol 5
(10)
◽
pp. 1970054
Stefan Petzold
◽
Alexander Zintler
◽
Robert Eilhardt
◽
Eszter Piros
◽
Nico Kaiser
◽
...
2019 ◽
Vol 5
(10)
◽
pp. 1900484
◽
Stefan Petzold
◽
Alexander Zintler
◽
Robert Eilhardt
◽
Eszter Piros
◽
Nico Kaiser
◽
...
2020 ◽
Vol 12
(2)
◽
pp. 02008-1-02008-4
Pramod J. Patil
◽
◽
Namita A. Ahir
◽
Suhas Yadav
◽
Chetan C. Revadekar
◽
...
2012 ◽
Vol 21
(6)
◽
pp. 065201
◽
Jian-Wei Zhao
◽
Feng-Juan Liu
◽
Hai-Qin Huang
◽
Zuo-Fu Hu
◽
Xi-Qing Zhang
Debasis Das
◽
Xuanyao Fong
2016 ◽
Vol 108
(4)
◽
pp. 049902
Myung Ju Kim
◽
Dong Su Jeon
◽
Ju Hyun Park
◽
Tae Geun Kim
2016 ◽
Vol 16
(10)
◽
pp. 10303-10307
◽
Kyu Young Kim
◽
Ee Le Shim
◽
Young Jin Choi
2020 ◽
Vol 6
(6)
◽
pp. 2000209
◽
Siddheswar Maikap
◽
Writam Banerjee
Y. H. Tseng
◽
S. S. Chung
◽
S. Shin
◽
S. S. M. Kang
◽
H. Y. Lee
◽
...
Y.R. Wang
◽
B. Chen
◽
B. Gao
◽
L.F. Liu
◽
J.F. Kang