Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.12(2).02008 ◽

2020 ◽

Vol 12 (2) ◽

pp. 02008-1-02008-4

Author(s):

Pramod J. Patil ◽

◽

Namita A. Ahir ◽

Suhas Yadav ◽

Chetan C. Revadekar ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Conductive Filament ◽

Filament Temperature

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The effects of substrate temperature on ZnO-based resistive random access memory devices

Chinese Physics B ◽

10.1088/1674-1056/21/6/065201 ◽

2012 ◽

Vol 21 (6) ◽

pp. 065201 ◽

Author(s):

Jian-Wei Zhao ◽

Feng-Juan Liu ◽

Hai-Qin Huang ◽

Zuo-Fu Hu ◽

Xi-Qing Zhang

Keyword(s):

Substrate Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

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A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3123067 ◽

2021 ◽

pp. 1-8

Author(s):

Debasis Das ◽

Xuanyao Fong

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Stochastic Phenomena ◽

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Publisher's Note: “Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices” [Appl. Phys. Lett. 106, 203101 (2015)]

Applied Physics Letters ◽

10.1063/1.4941106 ◽

2016 ◽

Vol 108 (4) ◽

pp. 049902

Author(s):

Myung Ju Kim ◽

Dong Su Jeon ◽

Ju Hyun Park ◽

Tae Geun Kim

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Tantalum Nitride ◽

Memory Devices ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics

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Fabrication of Transparent AZO/ZnO/ITO Resistive Random Access Memory Devices and Their ZnO Active Layer Deposition Temperature-Dependent Switching Characteristics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13149 ◽

2016 ◽

Vol 16 (10) ◽

pp. 10303-10307 ◽

Author(s):

Kyu Young Kim ◽

Ee Le Shim ◽

Young Jin Choi

Keyword(s):

Active Layer ◽

Deposition Temperature ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Temperature Dependent ◽

Access Memory ◽

Layer Deposition ◽

Switching Characteristics

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In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Advanced Electronic Materials ◽

10.1002/aelm.202000209 ◽

2020 ◽

Vol 6 (6) ◽

pp. 2000209 ◽

Author(s):

Siddheswar Maikap ◽

Writam Banerjee

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Synergistic Approach

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Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

Advanced Electronic Materials ◽

10.1002/aelm.201970054 ◽

2019 ◽

Vol 5 (10) ◽

pp. 1970054

Author(s):

Stefan Petzold ◽

Alexander Zintler ◽

Robert Eilhardt ◽

Eszter Piros ◽

Nico Kaiser ◽

...

Keyword(s):

Grain Boundary ◽

Resistive Switching ◽

Hafnium Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

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La/Al-doped ZrO2 Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

10.7567/ssdm.2014.ps-4-5 ◽

2014 ◽

Author(s):

Y.R. Wang ◽

B. Chen ◽

B. Gao ◽

L.F. Liu ◽

J.F. Kang

Keyword(s):

Thin Film ◽

Solid State ◽

Sol Gel ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

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Switching characteristics of ZnO based transparent resistive random access memory devices grown by pulsed laser deposition

physica status solidi (c) ◽

10.1002/pssc.200983244 ◽

2010 ◽

Vol 7 (6) ◽

pp. 1718-1720 ◽

Author(s):

Pankaj Misra ◽

Amit K. Das ◽

Lalit M. Kukreja

Keyword(s):

Pulsed Laser Deposition ◽

Random Access ◽

Pulsed Laser ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Laser Deposition ◽

Memory Devices ◽

Access Memory ◽

Switching Characteristics

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Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.044101 ◽

2016 ◽

Vol 55 (4) ◽

pp. 044101 ◽

Author(s):

Cheng-Yen Wu ◽

Hsin-Chiang You ◽

Gong-Kai Lin ◽

Wen-Luh Yang

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Operational Characteristic ◽

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Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory

2017 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2017.7936390 ◽

2017 ◽

Author(s):

Francesco Maria Puglisi ◽

Umberto Celano ◽

Andrea Padovani ◽

Wilfried Vandervorst ◽

Luca Larcher ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Filament Formation ◽

Access Memory ◽

Conductive Filament

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