A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Author(s):  
Y. H. Tseng ◽  
S. S. Chung ◽  
S. Shin ◽  
S. S. M. Kang ◽  
H. Y. Lee ◽  
...  
2011 ◽  
Vol 14 (2) ◽  
pp. H103 ◽  
Author(s):  
Shih-Cheng Chen ◽  
Ting-Chang Chang ◽  
Shih-Yang Chen ◽  
Hung-Wei Li ◽  
Yu-Ting Tsai ◽  
...  

2019 ◽  
Vol 66 (7) ◽  
pp. 1715-1718 ◽  
Author(s):  
Stefan Petzold ◽  
S. U. Sharath ◽  
Jonas Lemke ◽  
Erwin Hildebrandt ◽  
Christina Trautmann ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11585-11590 ◽  
Author(s):  
Cong Ye ◽  
Jia-Ji Wu ◽  
Chih-Hung Pan ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).


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