In‐Situ Loading Bridgman Growth of Mg 3 Bi 1.49 Sb 0.5 Te 0.01 Bulk Crystals for Thermoelectric Applications

2021 ◽  
pp. 2101125
Author(s):  
Qi‐Qi Wang ◽  
Fan Li ◽  
Sheng‐Qing Xia ◽  
Jian Liu ◽  
Xiao‐Cun Liu ◽  
...  
Keyword(s):  
Bulk Crystals ◽  
Bridgman Growth

In-situ monitoring during vapour phase growth of bulk crystals of cadmium zinc telluride

2008 ◽  
Author(s):  
John T. Mullins ◽  
Benjamin J. Cantwell ◽  
Fabrice Dierre ◽  
Alex T.G. Pym ◽  
Arnab Basu ◽  
...  
Keyword(s):  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Vapour Phase ◽  
In Situ Monitoring ◽  
Bulk Crystals ◽  
Phase Growth ◽  
Cadmium Zinc

In-Situ Observations of High Temperature Surface Processes on α-Alumina Bulk Crystals

1990 ◽  
Vol 208 ◽  
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
Structural Changes ◽  
Atomic Diffusion ◽  
Surface Process ◽  
Bulk Crystals ◽  
Dynamic Changes ◽  
Adsorption Processes ◽  
Reflection Electron Microscopy ◽  
In Situ Observations ◽  
Temperature Surface

ABSTRACTReflection electron microscopy (REM) was applied to image in-situ the dynamic changes of atomic-height steps on the surfaces of a-alumina bulk crystals heated to high temperatures. Atomic diffusion, desorption and adsorption processes on cleaved a-alumina (012) surfaces were directly observed at temperatures of 1470 to 1670 K. The surface started to show visible structural changes at 1470–1520 K. The main surface process appears to be atomic desorption, which creates large, flat vacancy-type terraces on the surface.

In-situ observations of the behaviors of ferroelectric domains in BaTiO3 under applied electric fields with TEM

1992 ◽  
Vol 50 (1) ◽  
pp. 348-349
Author(s):  
Feng Tsai ◽  
Victoria Khiznichenko ◽  
J. M. Cowley
Keyword(s):  
Optical Microscopy ◽  
Electric Fields ◽  
Ferroelectric Materials ◽  
In Situ Tem ◽  
Bulk Crystals ◽  
Large Bulk ◽  
Ferroelectric Domains ◽  
In Situ Observations ◽  
New Interpretation

The previous studies on the behaviors of ferroelectric domains under applied electric fields were made by a number of researchers, e.g. Merz and Little on bulk BaTiO3 crystals with optical microscopy. It was suggested that under the applied electric field the new antiparallel domains nucleated and grew and 90° and 180° domains nucleated and grew sidewise. However, those results and conclusions were obtained from the experiments on large bulk crystals with optical microscopy of relatively lower magnification and resolution. TEM is a very powerful tool in the study of crystal structure and defects and may provide a new interpretation to the study of microdomains of hundred angstroms in thin ferroelectric films with a higher magnification and resolution and may be combined with electron diffraction. However, no reference has been found that an in-situ TEM study of the behaviors of ferroelectric materials under applied electric fields has ever been made.

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals

2005 ◽  
Vol 483-485 ◽  
pp. 445-448 ◽  
Author(s):  
Holger Schmitt ◽  
Ralf Müller ◽  
Manfred Maier ◽  
Albrecht Winnacker ◽  
Peter J. Wellmann
Keyword(s):  
Bulk Crystals ◽  
Photoluminescence Study ◽  
Co Doping ◽  
As Doping ◽  
Stabilizing Effect ◽  
Luminescence Yield ◽  
Secondary Ion ◽  
Rare Earth Doped ◽  
Co Doped

Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 · 1014 cm-3 to 1.04 · 1015 cm-3, while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

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