scholarly journals Fast Proton Insertion in Layered H 2 W 2 O 7 via Selective Etching of an Aurivillius Phase

2020 ◽  
pp. 2003335
Author(s):  
Ruocun Wang ◽  
Yangyunli Sun ◽  
Alexander Brady ◽  
Simon Fleischmann ◽  
Tim B. Eldred ◽  
...  
Keyword(s):  
Selective Etching ◽  
Aurivillius Phase ◽  
Fast Proton

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Crystal Engineering of Bi2WO6 to Polar Aurivillius-Phase Oxyhalides

2019 ◽  
Author(s):  
Kazuki Morita ◽  
Ji-Sang Park ◽  
Sunghyun Kim ◽  
Kenji Yasuoka ◽  
Aron Walsh
Keyword(s):  
Photocatalytic Activity ◽  
Crystal Engineering ◽  
First Principles ◽  
Parent Compound ◽  
Aurivillius Phase ◽  
Aurivillius Phases ◽  
Charge Neutrality ◽  
Bismuth Oxides ◽  
Structure Surface ◽  
Electric Dipoles

The Aurivillius phases of complex bismuth oxides have attracted considerable attention due to their lattice polarization (ferroelectricity) and photocatalytic activity. We report a first-principles exploration of Bi<sub>2</sub>WO<sub>6</sub> and the replacement of W<sup>6+</sup> by pentavalent (Nb<sup>5+</sup>, Ta<sup>5+</sup>) and tetravalent (Ti<sup>4+</sup>, Sn<sup>4+</sup>) ions, with charge neutrality maintained by the formation of a mixed-anion oxyhalide sublattice. We find that Bi<sub>2</sub>SnO<sub>4</sub>F<sub>2</sub> is thermodynamically unstable, in contrast to Bi<sub>2</sub>TaO<sub>5</sub>F, Bi<sub>2</sub>NbO<sub>5</sub>F and Bi<sub>2</sub>TiO<sub>4</sub>F<sub>2</sub>. The electric dipoles introduced by chemical substitutions in the parent compound are found to suppress the spontaneous polarization from 61.55 μC/cm<sup>2</sup> to below 15.50 μC/cm<sup>2</sup>. Analysis of the trends in electronic structure, surface structure, and ionization potentials are reported. This family of materials can be further extended with control of layer thicknesses and choice of compensating halide species.<br>

Fabrication of Antiswelling Loose Nanofiltration Membranes via a “Selective-Etching-Induced Reinforcing” Strategy for Bioseparation

2021 ◽  
Vol 13 (16) ◽  
pp. 19312-19323
Author(s):  
Shiwei Guo ◽  
Huiru Zhang ◽  
Xiangrong Chen ◽  
Shichao Feng ◽  
Yinhua Wan ◽  
...  
Keyword(s):  
Selective Etching ◽  
Nanofiltration Membranes

Comparison Between Three Si1-xGex versus Si Selective Etching Processes

2019 ◽  
Vol 16 (10) ◽  
pp. 439-449 ◽  
Author(s):  
Thierry Salvetat ◽  
Vincent Destefanis ◽  
Stephan Borel ◽  
Jean-Michel Hartmann ◽  
Olivier Kermarrec ◽  
...  
Keyword(s):  
Selective Etching

Technique for Large Elevation of Source/Drain Using Implantation Mediated Selective Etching

2003 ◽  
Vol 6 (10) ◽  
pp. G117 ◽  
Author(s):  
M. Q. Huda ◽  
K. Sakamoto ◽  
H. Tanoue
Keyword(s):  
Selective Etching

Location of H+ sites in the fast proton-conductor (H3O)SbTeO6 pyrochlore

2005 ◽  
pp. 865 ◽  
Author(s):  
Jos� Antonio Alonso ◽  
Xavier Turrillas
Keyword(s):  
Proton Conductor ◽  
Fast Proton

scholarly journals Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

2010 ◽  
Vol 17 (9) ◽  
pp. 094501 ◽  
Author(s):  
X. X. Zhong ◽  
E. Tam ◽  
X. Z. Huang ◽  
P. Colpo ◽  
F. Rossi ◽  
...  
Keyword(s):  
Input Power ◽  
Selective Etching ◽  
Gas Pressure
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