ChemInform Abstract: HIGH-TEMPERATURE TIME-DEPENDENT STRENGTH OF A SILICON-SILICON CARBIDE COMPOSITE

1977 ◽  
Vol 8 (33) ◽  
pp. no-no
Author(s):  
G. G. TRANTINA ◽  
R. L. MEHAN
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Time Dependent ◽  
Carbide Composite ◽  
Temperature Time ◽  
Silicon Silicon

Study on Properties of Carbon Particle Modified Silicon Carbide Composite Ceramics

2011 ◽  
Vol 311-313 ◽  
pp. 276-282 ◽  
Author(s):  
You Jun Lu ◽  
Hong Fang Shen ◽  
Yan Ming Wang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Carbon Particle ◽  
Composite Ceramics ◽  
Carbon Particles ◽  
High Temperature Mechanical Properties ◽  
Sic Ceramics ◽  
Carbide Composite ◽  
Application Fields ◽  
Different Content

High-temperature mechanical properties, machinability, oxidation resistance and thermal shock resistance of different content of carbon particles modified silicon carbide composite ceramics (Cp/SiC) prepared by pressureless sintering techniques were studied. Adhesion of Cp/SiC to melted glass under 1000°C was also observed. The results showed that 15-Cp/SiC had the optimum machinability and it also did not adhere to melted glass at high temperature. And flexural strength, hardness, and fracture toughness of 15-Cp/SiC is 136.5MPa, 274.6kgf/mm2, 2.58MPa•m1/2 respectively. The good performance of Cp/SiC made it possible to be used as high temperature glass fixture, which means that Cp/SiC can not only improve the service life of fixture materials, but also broaden the application fields of SiC ceramics.

Development of a 300°C capable SiC based operational amplifier

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Long Term Stability ◽  
Silicon Silicon

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.

Quantum-chemical modeling of lithiation of a silicon–silicon carbide composite

2016 ◽  
Vol 61 (11) ◽  
pp. 1423-1429 ◽  
Author(s):  
A. S. Zyubin ◽  
T. S. Zyubina ◽  
Yu. A. Dobrovol’skii ◽  
V. M. Volokhov
Keyword(s):  
Silicon Carbide ◽  
Quantum Chemical ◽  
Quantum Chemical Modeling ◽  
Chemical Modeling ◽  
Carbide Composite ◽  
Silicon Silicon
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