Micromechanism of Time Dependent Deformation and Fracture of Silicon Carbide under High Temperature Condition

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

Applied Physics Express ◽

10.35848/1882-0786/abaf0f ◽

2020 ◽

Vol 13 (9) ◽

pp. 095504

Author(s):

Ayumu Shimizu ◽

Shintaro Tsuno ◽

Masahiro Kamiyama ◽

Keiju Ishibashi ◽

Akira Kitamoto ◽

...

Keyword(s):

High Temperature ◽

High Rate ◽

High Temperature Condition

Molecular Modeling and Simulation of Transketolase from Orthosiphon stamineus

Current Computer - Aided Drug Design ◽

10.2174/1573409914666181022141753 ◽

2019 ◽

Vol 15 (4) ◽

pp. 308-317

Author(s):

Mei Ling Ng ◽

Zaidah binti Rahmat ◽

Mohd Shahir Shamsir bin Omar

Keyword(s):

High Temperature ◽

Protein Function ◽

3D Model ◽

High Capacity ◽

Antitumor Activities ◽

Pharmacological Activities ◽

Orthosiphon Stamineus ◽

Lower Blood ◽

Pharmaceutical Industries ◽

High Temperature Condition

Background: Orthosiphon stamineus is a traditional medicinal plant in Southeast Asia countries with various well-known pharmacological activities such as antidiabetic, diuretics and antitumor activities. Transketolase is one of the proteins identified in the leaves of the plant and transketolase is believed able to lower blood sugar level in human through non-pancreatic mechanism. In order to understand the protein behavioral properties, 3D model of transketolase and analysis of protein structure are of obvious interest. Methods: In the present study, 3D model of transketolase was constructed and its atomic characteristics revealed. Besides, molecular dynamic simulation of the protein at 310 K and 368 K deciphered transketolase may be a thermophilic protein as the structure does not distort even at elevated temperature. This study also used the protein at 310 K and 368 K resimulated back at 310 K environment. Results: The results revealed that the protein is stable at all condition which suggest that it has high capacity to adapt at different environment not only at high temperature but also from high temperature condition to low temperature where the structure remains unchanged while retaining protein function. Conclusion: The thermostability properties of transketolase is beneficial for pharmaceutical industries as most of the drug making processes are at high temperature condition.

ChemInform Abstract: THE OXIDATION CHARACTERISTICS OF ELECTRODEPOSITED NICKEL COMPOSITES CONTAINING SILICON CARBIDE PARTICLES AT HIGH TEMPERATURE

Chemischer Informationsdienst ◽

10.1002/chin.197824023 ◽

1978 ◽

Vol 9 (24) ◽

Author(s):

F. H. STOTT ◽

D. J. ASHBY

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Oxidation Characteristics ◽

Electrodeposited Nickel ◽

Nickel Composites ◽

Silicon Carbide Particles ◽

Carbide Particles

High-Temperature Deformation and Fracture Behavior of Cu–SiO2 Bicrystals with [011] Twist Boundaries

Materials Transactions JIM ◽

10.2320/matertrans1989.37.754 ◽

1996 ◽

Vol 37 (4) ◽

pp. 754-761 ◽

Cited By ~ 1

Author(s):

Hiromi Miura ◽

Kazuhide Saijo ◽

Taku Sakai

Keyword(s):

High Temperature ◽

Fracture Behavior ◽

High Temperature Deformation ◽

Temperature Deformation ◽

Deformation And Fracture ◽

Twist Boundaries

Investigation Into Thermal Stress Characteristics of Pipe-in-Pipe Under High Temperature Condition

Volume 3A: Design and Analysis ◽

10.1115/pvp2018-84578 ◽

2018 ◽

Author(s):

Si-Hwa Jeong ◽

Min-Gu Won ◽

Nam-Su Huh ◽

Yun-Jae Kim ◽

Young-Jin Oh ◽

...

Keyword(s):

Heat Transfer ◽

Thermal Stress ◽

High Temperature ◽

Temperature Distribution ◽

Heat Transfer Analysis ◽

Piping System ◽

Curved Pipe ◽

High Temperature Condition ◽

Single Pipe ◽

Radiation Conditions

In this paper, the thermal stress characteristics of the pipe-in-pipe (PIP) system under high temperature condition are analyzed. The PIP is a type of pipe applied in sodium-cooled faster reactor (SFR) and has a different geometry from a single pipe. In particular, under the high temperature condition of the SFR, the high thermal stress is generated due to the temperature gradient occurring between the inner pipe and outer pipe. To investigate the thermal stress characteristics, three cases are considered according to geometry of the support. The fully constrained support and intermediate support are considered for case 1 and 2, respectively. For case 3, both supports are applied to the actual curved pipe. The finite element (FE) analyses are performed in two steps for each case. Firstly, the heat transfer analysis is carried out considering the thermal conduction, convection and radiation conditions. From the heat transfer analysis, the temperature distribution results in the piping system are obtained. Secondly, the structural analysis is performed considering the temperature distribution results and boundary conditions. Finally, the effects of the geometric characteristics on the thermal stress in the PIP system are analyzed.

Silicon Carbide Die Attach Scheme for 500°C Operation

MRS Proceedings ◽

10.1557/proc-622-t8.10.1 ◽

2000 ◽

Vol 622 ◽

Cited By ~ 11

Author(s):

Liang-Yu Chen ◽

Gary W. Hunter ◽

Philip G. Neudeck

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Electrical Resistance ◽

Room Temperature ◽

Semiconductor Devices ◽

Single Crystal Silicon ◽

Film Material ◽

Crystal Silicon ◽

Pure Alumina ◽

Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.