ChemInform Abstract: THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1-YAS1-XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP

1978 ◽  
Vol 9 (42) ◽  
Author(s):  
R. E. NAHORY ◽  
M. A. POLLACK ◽  
E. D. BEEBE ◽  
J. C. DEWINTER ◽  
M. ILEGEMS
1978 ◽  
Vol 125 (7) ◽  
pp. 1053-1058 ◽  
Author(s):  
R. E. Nahory ◽  
M. A. Pollack ◽  
E. D. Beebe ◽  
J. C. DeWinter ◽  
M. Ilegems

1993 ◽  
Vol 312 ◽  
Author(s):  
Werner Möhling ◽  
H. Weishart ◽  
E. Bauser

AbstractDislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.


2017 ◽  
Vol 51 (11) ◽  
pp. 1485-1489
Author(s):  
A. V. Murel ◽  
V. B. Shmagin ◽  
V. L. Krukov ◽  
S. S. Strelchenko ◽  
E. A. Surovegina ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document