Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

2017 ◽  
Vol 51 (11) ◽  
pp. 1485-1489
Author(s):  
A. V. Murel ◽  
V. B. Shmagin ◽  
V. L. Krukov ◽  
S. S. Strelchenko ◽  
E. A. Surovegina ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
High Resistance ◽  
Liquid Phase Epitaxy ◽  
Capacitance Spectroscopy

Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

1993 ◽  
Vol 312 ◽  
Author(s):  
Werner Möhling ◽  
H. Weishart ◽  
E. Bauser
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystal Surface ◽  
Double Crystal ◽  
Growth Interface ◽  
Growth Step ◽  
Burgers Vector ◽  
X Ray ◽  
Back Reflection

AbstractDislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

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