ChemInform Abstract: New Arsenates M(I)3Sc2(AsO4)3 (M(I): K or Rb): Synthesis and Study by X-Ray Diffraction, Vibrational Spectroscopy, and Ionic Conductivity Measurements.

AbstractWe have synthesized Gd-doped ceria polycrystalline samples (5, 10, 15 %mol), having relative densities exceeding 95% and grain sizes between 30 and 160 nm after axial hot pressing (750 °C, 250 MPa). The samples were prepared by sintering nanopowders obtained by sol-gel chemistry methods having a very narrow size distribution centered at about 16 nm. SEM and X-ray diffraction were performed to characterize the sample microstructures and to assess their structures. We report ionic conductivity measurements using impedance spectroscopy. It is important to investigate the properties of these systems with sub-micrometric grains and as a function of their composition. Therefore, samples having micrometric and nanometric grain sizes (and different Gd content) were studied. Evidence of Gd segregation near the grain boundaries is given and the impact on the ionic conductivity, as a function of the grain size and Gd composition, is discussed and compared to microcrystalline samples.

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(β-NaFeO2)1−x(SiO2, GeO2)x solid solutions: A study by X-ray diffraction, IR spectroscopy, and ionic conductivity measurements

Journal of Solid State Chemistry ◽

10.1016/0022-4596(92)90020-v ◽

1992 ◽

Vol 97 (1) ◽

pp. 156-162 ◽

Cited By ~ 9

Author(s):

A. Rulmont ◽

P. Tarte ◽

J.M. Winand ◽

M. Almou

Keyword(s):

Ionic Conductivity ◽

Ir Spectroscopy ◽

Solid Solutions ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

X Ray

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Defect-Mediated Conductivity Enhancements in Na3-xPn1-xWxS4 (Pn = P, Sb) using Aliovalent Substitutions

10.26434/chemrxiv.9943961.v2 ◽

2019 ◽

Author(s):

Till Fuchs ◽

Sean Culver ◽

Paul Till ◽

Wolfgang Zeier

Keyword(s):

Ionic Conductivity ◽

Vacancy Concentration ◽

Sodium Ion ◽

High Ionic Conductivity ◽

Ionic Conductors ◽

X Ray Diffraction ◽

X Ray ◽

Solid State Batteries ◽

Ion Conducting ◽

Very High

The sodium-ion conducting family of Na3PnS4, with Pn = P, Sb, have gained interest for the use in solid-state batteries due to their high ionic conductivity. However, significant improvements to the conductivity have been hampered by the lack of aliovalent dopants that can introduce vacancies into the structure. Inspired by the need for vacancy introduction into Na3PnS4, the solid solutions with WS42- introduction are explored. The influence of the substitution with WS42- for PS43- and SbS43-, respectively, is monitored using a combination of X-ray diffraction, Raman and impedance spectroscopy. With increasing vacancy concentration improvements resulting in a very high ionic conductivity of 13 ± 3 mS·cm-1 for Na2.9P0.9W0.1S4 and 41 ± 8 mS·cm-1 for Na2.9Sb0.9W0.1S4 can be observed. This work acts as a stepping-stone towards further engineering of ionic conductors using vacancy-injection via aliovalent substituents.

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Defect-Mediated Conductivity Enhancements in Na3-xPn1-xWxS4 (Pn = P, Sb) using Aliovalent Substitutions

10.26434/chemrxiv.9943961.v1 ◽

2019 ◽

Author(s):

Till Fuchs ◽

Sean Culver ◽

Paul Till ◽

Wolfgang Zeier

Keyword(s):

Ionic Conductivity ◽

Vacancy Concentration ◽

Sodium Ion ◽

High Ionic Conductivity ◽

Ionic Conductors ◽

X Ray Diffraction ◽

X Ray ◽

Solid State Batteries ◽

Ion Conducting ◽

Very High

The sodium-ion conducting family of Na3PnS4, with Pn = P, Sb, have gained interest for the use in solid-state batteries due to their high ionic conductivity. However, significant improvements to the conductivity have been hampered by the lack of aliovalent dopants that can introduce vacancies into the structure. Inspired by the need for vacancy introduction into Na3PnS4, the solid solutions with WS42- introduction are explored. The influence of the substitution with WS42- for PS43- and SbS43-, respectively, is monitored using a combination of X-ray diffraction, Raman and impedance spectroscopy. With increasing vacancy concentration improvements resulting in a very high ionic conductivity of 13 ± 3 mS·cm-1 for Na2.9P0.9W0.1S4 and 41 ± 8 mS·cm-1 for Na2.9Sb0.9W0.1S4 can be observed. This work acts as a stepping-stone towards further engineering of ionic conductors using vacancy-injection via aliovalent substituents.

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Changing the Static and Dynamic Lattice Effects for the Improvement of the Ionic Transport Properties Within the Argyrodite Li6PS5-xSexI

10.26434/chemrxiv.9807770.v1 ◽

2019 ◽

Author(s):

Roman Schlem ◽

Michael Ghidiu ◽

Sean Culver ◽

Anna-Lena Hansen ◽

Wolfgang Zeier

Keyword(s):

Ionic Conductivity ◽

Activation Barrier ◽

Parent Compound ◽

Ionic Transport ◽

X Ray Diffraction ◽

X Ray ◽

Lattice Effects ◽

Solid State Batteries ◽

All Solid State Batteries ◽

Pulse Echo

The lithium argyrodites Li6PS5X (X = Cl, Br, I) have been gaining momentum as candidates for electrolytes in all-solid-state batteries. While these materials have been well-characterized structurally, the influences of the static and dynamic lattice properties are not fully understood. Recent improvements to the ionic conductivity of Li6PS5I (which as a parent compound is a poor ionic conductor) via elemental substitutions have shown that a multitude of influences affect the ionic transport in the lithium argyrodites, and that even poor conductors in this class have room left for improvement.Here we explore the influence of isoelectronic substitution of sulfur with selenium in Li6PS5-xSexI. Using a combination of X-ray diffraction, impedance spectroscopy, Raman spectroscopy, and pulse-echo speed of sound measurements,we explore the influence of the static and dynamic lattice on the ionic transport. The substitution of S2-with Se2- broadens the diffusion pathways and structural bottlenecks, as well as leading to a softer more polarizable lattice, all of which lower the activation barrier and lead to an increase in the ionic conductivity. This work sheds light on ways to systematically understand and improve the functional properties of this exciting material family.

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Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

Engineering and Technology Journal ◽

10.30684/etj.v38i4a.351 ◽

2020 ◽

Vol 38 (4A) ◽

pp. 491-500

Author(s):

Abeer F. Al-Attar ◽

Saad B. H. Farid ◽

Fadhil A. Hashim

Keyword(s):

Ionic Conductivity ◽

Electrochemical Impedance ◽

Structural Information ◽

Impedance Analysis ◽

High Energy ◽

Yttria Stabilized Zirconia ◽

X Ray Diffraction ◽

Stabilized Zirconia ◽

Powder Morphology ◽

X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

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X- ray diffraction and dielectric properties of PbSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.115 ◽

2019 ◽

Vol 15 (34) ◽

pp. 1-14

Author(s):

Bushra A. Hasan

Keyword(s):

Thin Films ◽

Thermal Activation ◽

Thermal Evaporation ◽

Thermal Activation Energy ◽

Dielectric Constants ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽

10.3390/coatings11060724 ◽

2021 ◽

Vol 11 (6) ◽

pp. 724

Author(s):

Sara Massardo ◽

Alessandro Cingolani ◽

Cristina Artini

Keyword(s):

Thin Films ◽

High Pressure ◽

Rare Earth ◽

Ionic Conductivity ◽

Bulk Material ◽

Threshold Temperature ◽

Doped Ceria ◽

X Ray Diffraction ◽

X Ray ◽

Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

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Structure and Conductivity of Iodine-Doped C60 Thin Films

MRS Proceedings ◽

10.1557/proc-359-443 ◽

1994 ◽

Vol 359 ◽

Cited By ~ 1

Author(s):

Jun Chen ◽

Haiyan Zhang ◽

Baoqiong Chen ◽

Shaoqi Peng ◽

Ning Ke ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Room Temperature ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Temperature Conductivity ◽

Room Temperature Conductivity ◽

X Ray ◽

Thermally Activated ◽

Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

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