ChemInform Abstract: Preparation of Mixtures of Silicon Oxynitride and Silicon Nitride by the Reaction of Calcium Silicide with Ammonium Chloride.

ChemInform ◽  
2010 ◽  
Vol 24 (15) ◽  
pp. no-no
Author(s):  
F. HOFER ◽  
W. VEIGL ◽  
E. HENGGE
1999 ◽  
Vol 5 (S2) ◽  
pp. 778-779
Author(s):  
R.W Carpenter ◽  
W Braue ◽  
M.J. Kim

Lath-like silicon oxynitride crystals have often been observed in the microstructure of silicon nitride based ceramics after processing. They are usually located in glassy regions which are siliceous solidified sintering aid liquid, and usually contain a small (∼100nm) a-Si3N4 crystal. These nitride crystals are considered to be seeds, incompletely dissolved in the melt, that are heterogeneous nucleation sites for the oxynitride crystals. We present here the first observations of morphological and crystallographic habits between the seed nanocrystals and the host oxynitride laths.Fig. 1 shows a typical oxynitride lath containing a nitride seed crystal. The lath is surrounded by glass and ß-Si3N4 particles, and a small cristobalite particle (a minor constituent). This microstructure is from an Si02-Si3N4 ceramic processed with Al2O3 sintering aid. The same oxynitride lath/seed structures were observed when other sintering aids (eg. Y2O3, MgO, ZrO2) were used, so they are independent of sintering aid.


2017 ◽  
Vol 17 (4) ◽  
pp. 517-521 ◽  
Author(s):  
Sungeun Park ◽  
Hyomin Park ◽  
Dongseop Kim ◽  
Junggyu Nam ◽  
JungYup Yang ◽  
...  

1986 ◽  
Vol 143 ◽  
pp. 525-528 ◽  
Author(s):  
G. Busca ◽  
V. Lorenzelli ◽  
M.I. Baraton ◽  
P. Quintard ◽  
R. Marchand

1989 ◽  
Vol 149 ◽  
Author(s):  
P. K. Bhat ◽  
H. Ogura ◽  
A. Madan

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.


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