Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015 ◽  
Vol 44 (21) ◽  
pp. 7715-7736 ◽  
Author(s):  
Hennrik Schmidt ◽  
Francesco Giustiniano ◽  
Goki Eda
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
State Of The Art ◽  
Transition Metal Dichalcogenide ◽  
Surface And Interface ◽  
Field Effect Devices ◽  
Interface Effects

We review the state-of-the-art electronic properties of atomically thin TMD FETs with a focus on surface and interface effects.

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions

2016 ◽  
Vol 4 (46) ◽  
pp. 10962-10966 ◽  
Author(s):  
Yipeng An ◽  
Mengjun Zhang ◽  
Dapeng Wu ◽  
Zhaoming Fu ◽  
Kun Wang
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenide ◽  
Electronic Transport Properties

All kinds of MoS2–WS2 lateral heterojunctions present an interesting negative differential resistive effect.

Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels

2019 ◽  
Vol 5 (12) ◽  
pp. 1900730 ◽  
Author(s):  
Sanghyuck Yu ◽  
Yongjae Cho ◽  
June Yeong Lim ◽  
Hyeokjae Kwon ◽  
Yeonsu Jeong ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Transition Metal Dichalcogenide ◽  
Field Effect Devices ◽  
Common Gate

Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

2019 ◽  
Vol 21 (21) ◽  
pp. 11359-11366 ◽  
Author(s):  
Armando Pezo ◽  
Matheus P. Lima ◽  
Marcio Costa ◽  
Adalberto Fazzio
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenides ◽  
Edge States ◽  
Electronic Transport Properties ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

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