An input controlled leakage restrainer transistor‐based technique for leakage and short‐circuit power reduction of 1‐bit hybrid full adders

Author(s):  
Mohammad Moradinezhad Maryan ◽  
Majid Amini‐Valashani ◽  
Seyed Javad Azhari
VLSI Design ◽  
2001 ◽  
Vol 12 (2) ◽  
pp. 125-138
Author(s):  
Anshuman Nayak ◽  
Malay Haldar ◽  
Prith Banerjee ◽  
Chunhong Chen ◽  
Majid Sarrafzadeh

We present a framework for combining Voltage Scaling (VS) and Gate Sizing (GS) techniques for power optimizations. We introduce a fast heuristic for choosing gates for sizing and voltage scaling such that the total power is minimized under delay constraints. We also use a more accurate estimate for determining the power dissipation of the circuit by taking into account the short circuit power along with the dynamic power. A better model of the short circuit power is used which takes into account the load capacitance of the gates. Our results show that the combination of VS and GS perform better than the techniques applied in isolation. An average power reduction of 73% is obtained when decisions are taken assuming dynamic power only. In contrast, average power reduction is 77% when decisons include the short circuit power dissipation.


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