Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

2007 ◽  
Vol 13 (11) ◽  
pp. 595-600 ◽  
Author(s):  
A. M. Wrobel ◽  
I. Blaszczyk-Lezak
Keyword(s):  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Structural and mechanical characterization of diamond like carbon films grown by microwave plasma CVD

2010 ◽  
Vol 204 (16-17) ◽  
pp. 2817-2821 ◽  
Author(s):  
Sambita Sahoo ◽  
Swati S. Pradhan ◽  
Venkateswarlu Bhavanasi ◽  
S.K. Pradhan
Keyword(s):  
Mechanical Characterization ◽  
Microwave Plasma ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

2007 ◽  
Vol 253 (17) ◽  
pp. 7211-7218 ◽  
Author(s):  
I. Blaszczyk-Lezak ◽  
A.M. Wrobel ◽  
M.P.M. Kivitorma ◽  
I.J. Vayrynen ◽  
A. Tracz
Keyword(s):  
Growth Mechanism ◽  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Silicon Carbonitride Films Produced by Remote Hydrogen Microwave Plasma CVD Using a (Dimethylamino)dimethylsilane Precursor

2005 ◽  
Vol 11 (1) ◽  
pp. 44-52 ◽  
Author(s):  
I. Blaszczyk-Lezak ◽  
A. M. Wrobel ◽  
M. P. M. Kivitorma ◽  
I. J. Vayrynen
Keyword(s):  
Microwave Plasma ◽  
Silicon Carbonitride ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

High-k ZrO2 Gate Dielectric on Strained-Si

2003 ◽  
Vol 786 ◽  
Author(s):  
S. Bhattacharya ◽  
S. K. Samanta ◽  
S. Chatterjee ◽  
John McCarthy ◽  
B. M. Armstrong ◽  
...  
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Gate Dielectric ◽  
Microwave Plasma ◽  
Sige Layer ◽  
Plasma Cvd ◽  
Strained Si ◽  
High K ◽  
Microwave Plasma Cvd

ABSTRACTThe growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150°C) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, Dit, near the midgap energy, and the fixed oxide charge density, Qf/q. These are found to be 2.24 × 1012 cm−2 eV−1 and 1.45 × 1011 cm−2, respectively. Poole-Frenkel (PF) conduction mechanism is found to dominate the current conduction at room temperature.

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