Structural and mechanical characterization of diamond like carbon films grown by microwave plasma CVD

2010 ◽  
Vol 204 (16-17) ◽  
pp. 2817-2821 ◽  
Author(s):  
Sambita Sahoo ◽  
Swati S. Pradhan ◽  
Venkateswarlu Bhavanasi ◽  
S.K. Pradhan
Keyword(s):  
Mechanical Characterization ◽  
Microwave Plasma ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

scholarly journals Diamond like carbon coatings deposited by microwave plasma CVD: XPS and ellipsometric studies

2007 ◽  
Vol 30 (6) ◽  
pp. 541-546 ◽  
Author(s):  
R. M. Dey ◽  
M. Pandey ◽  
D. Bhattacharyya ◽  
D. S. Patil ◽  
S. K. Kulkarni
Keyword(s):  
Microwave Plasma ◽  
Diamond Like Carbon ◽  
Plasma Cvd ◽  
Carbon Coatings ◽  
Microwave Plasma Cvd

Diamond-like carbon thin films grown by large-area surface-wave mode microwave plasma CVD: Effects of stage distance to microwave window

2006 ◽  
Vol 15 (4-8) ◽  
pp. 913-916 ◽  
Author(s):  
Sudip Adhikari ◽  
Ashraf M.M. Omer ◽  
Sunil Adhikary ◽  
Mohamad Rusop ◽  
Hideo Uchida ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Microwave Plasma ◽  
Wave Mode ◽  
Diamond Like Carbon ◽  
Plasma Cvd ◽  
Large Area ◽  
Microwave Plasma Cvd ◽  
Carbon Thin Films

High-k ZrO2 Gate Dielectric on Strained-Si

2003 ◽  
Vol 786 ◽  
Author(s):  
S. Bhattacharya ◽  
S. K. Samanta ◽  
S. Chatterjee ◽  
John McCarthy ◽  
B. M. Armstrong ◽  
...  
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Gate Dielectric ◽  
Microwave Plasma ◽  
Sige Layer ◽  
Plasma Cvd ◽  
Strained Si ◽  
High K ◽  
Microwave Plasma Cvd

ABSTRACTThe growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150°C) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, Dit, near the midgap energy, and the fixed oxide charge density, Qf/q. These are found to be 2.24 × 1012 cm−2 eV−1 and 1.45 × 1011 cm−2, respectively. Poole-Frenkel (PF) conduction mechanism is found to dominate the current conduction at room temperature.

Characterization of photoluminescence of a-Si:H nanoball films fabricated by microwave plasma CVD

Vacuum ◽  
2002 ◽  
Vol 65 (3-4) ◽  
pp. 439-442 ◽  
Author(s):  
I. Kato ◽  
H. Kezuka ◽  
T. Matsumoto ◽  
R. Saito ◽  
T. Suzuki
Keyword(s):  
Microwave Plasma ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd
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