Characterization of undoped and doped homoepitaxial diamond layers produced by microwave plasma CVD

1994 ◽  
Vol 3 (4-6) ◽  
pp. 515-519 ◽  
Author(s):  
T.H. Borst ◽  
P.C. Münzinger ◽  
O. Weis
2010 ◽  
Vol 204 (16-17) ◽  
pp. 2817-2821 ◽  
Author(s):  
Sambita Sahoo ◽  
Swati S. Pradhan ◽  
Venkateswarlu Bhavanasi ◽  
S.K. Pradhan

2003 ◽  
Vol 786 ◽  
Author(s):  
S. Bhattacharya ◽  
S. K. Samanta ◽  
S. Chatterjee ◽  
John McCarthy ◽  
B. M. Armstrong ◽  
...  

ABSTRACTThe growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150°C) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, Dit, near the midgap energy, and the fixed oxide charge density, Qf/q. These are found to be 2.24 × 1012 cm−2 eV−1 and 1.45 × 1011 cm−2, respectively. Poole-Frenkel (PF) conduction mechanism is found to dominate the current conduction at room temperature.


Vacuum ◽  
2002 ◽  
Vol 65 (3-4) ◽  
pp. 439-442 ◽  
Author(s):  
I. Kato ◽  
H. Kezuka ◽  
T. Matsumoto ◽  
R. Saito ◽  
T. Suzuki

2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 134-142 ◽  
Author(s):  
J. Weng ◽  
F. Liu ◽  
L.W. Xiong ◽  
J.H. Wang ◽  
Q. Sun

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