High-k ZrO2 Gate Dielectric on Strained-Si

2003 ◽  
Vol 786 ◽  
Author(s):  
S. Bhattacharya ◽  
S. K. Samanta ◽  
S. Chatterjee ◽  
John McCarthy ◽  
B. M. Armstrong ◽  
...  
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Gate Dielectric ◽  
Microwave Plasma ◽  
Sige Layer ◽  
Plasma Cvd ◽  
Strained Si ◽  
High K ◽  
Microwave Plasma Cvd

ABSTRACTThe growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150°C) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, Dit, near the midgap energy, and the fixed oxide charge density, Qf/q. These are found to be 2.24 × 1012 cm−2 eV−1 and 1.45 × 1011 cm−2, respectively. Poole-Frenkel (PF) conduction mechanism is found to dominate the current conduction at room temperature.

Structural and mechanical characterization of diamond like carbon films grown by microwave plasma CVD

2010 ◽  
Vol 204 (16-17) ◽  
pp. 2817-2821 ◽  
Author(s):  
Sambita Sahoo ◽  
Swati S. Pradhan ◽  
Venkateswarlu Bhavanasi ◽  
S.K. Pradhan
Keyword(s):  
Mechanical Characterization ◽  
Microwave Plasma ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Electrical Contacts to Polycrystalline B Doped Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
K. Nishimura ◽  
K. Das ◽  
M. Iwase ◽  
J. T. Glass ◽  
K. Kobashi
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Electrical Contacts ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
Order Of Magnitude

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

Characterization of photoluminescence of a-Si:H nanoball films fabricated by microwave plasma CVD

Vacuum ◽  
2002 ◽  
Vol 65 (3-4) ◽  
pp. 439-442 ◽  
Author(s):  
I. Kato ◽  
H. Kezuka ◽  
T. Matsumoto ◽  
R. Saito ◽  
T. Suzuki
Keyword(s):  
Microwave Plasma ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

scholarly journals Large area microwave plasma CVD of diamond using composite right/left-handed materials

2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Cvd ◽  
Large Area ◽  
Left Handed ◽  
Microwave Plasma Cvd
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