Curauá Fiber Microimaging, Atomic Layer Deposition of Metal Oxide Films, and Obtaining of Nanowalled Microtubes

2011 ◽  
Vol 17 (1-3) ◽  
pp. 58-64 ◽  
Author(s):  
Iryna Grafova ◽  
Marianna Kemell ◽  
Juliana N. Lunz ◽  
Maria de Fátima V. Marques ◽  
Andriy Grafov ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Metal Oxide Films ◽  
Layer Deposition ◽  
Curauá Fiber

scholarly journals Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14856-14866 ◽  
Author(s):  
Mohammad I. Hossain ◽  
Adnan Mohammad ◽  
Wayesh Qarony ◽  
Saidjafarzoda Ilhom ◽  
Deepa R. Shukla ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Oxide Films ◽  
Atomic Layer ◽  
Metal Oxide Films ◽  
Tandem Solar Cells ◽  
Single Junction ◽  
Layer Deposition

The necessity of thin and highly doped metal oxide films is discussed for realizing efficient perovskite single and perovskite/silicon tandem solar cells.

Characterization of thin metal oxide films grown by atomic layer deposition

2004 ◽  
Author(s):  
Peter J. Evans ◽  
Kathryn Prince ◽  
Gerry Triani ◽  
Kim S. Finnie ◽  
David R. G. Mitchell ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Thin Metal ◽  
Metal Oxide Films ◽  
Layer Deposition

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

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