Extending the limit of atomic level grain boundary structure imaging using high-resolution electron microscopy

1991 ◽  
Vol 17 (2) ◽  
pp. 212-220 ◽  
Author(s):  
William Krakow
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
High Resolution Electron Microscopy ◽  
Atomic Level ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Resolution Electron

Grain boundary structure in TiO2-excess barium titanate

1998 ◽  
Vol 13 (12) ◽  
pp. 3449-3452 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Yuichi Ikuhara ◽  
Katsuro Hayashi ◽  
Taketo Sakuma
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
High Resolution Electron Microscopy ◽  
Growth Behavior ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Resolution Electron ◽  
Grain Growth Behavior ◽  
Electron Energy Loss

Grain boundary structure was examined in 0.1 mol% TiO2-excess BaTiO3 by high-resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Their grain boundaries were mostly faceted with {210} type habit. The faceted boundaries were characterized to be associated with an extra Ti–O2 bond with the rutile-like structure. The grain growth behavior in a small TiO2-excess BaTiO3 is discussed from the viewpoint of grain boundary structure.

TEM Studies of Grain Boundary Structure in a Cast Polycrystalline Silicon

2005 ◽  
Vol 475-479 ◽  
pp. 1673-1676 ◽  
Author(s):  
Isamu Kuchiwaki ◽  
Takahiro Hirabayashi ◽  
Hiroshi Fukushima
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Polycrystalline Silicon ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Difference

Cast polycrystalline silicon for solar cell contains mostly straight twin boundaries which are thought to have little effect on the electrical activity. There are, however, some complicated grain boundaries in it. One of these boundaries consists of slightly curved and straight parts. The structure of this boundary was analyzed to investigate the difference of these two types of boundaries. The conventional transmission electron microscopy (TEM) found that this slightly curved boundary was the zigzag shaped boundary made by (11 _ ,2) and ( _ ,211) planes. High resolution electron microscopy (HREM) confirmed that (11 _ ,2) plane was the boundary of {112} Σ3 twin boundary which formed a straight grain boundary at the other end of the analyzed grain boundary, and also confirmed that ( _ ,2 11) plane was also the boundary of {112} Σ3 twin boundary which intersected with the former twin boundary at an angle of 120 [deg].

Observations of grain boundary structure in submicrometer-grained Cu and Ni using high-resolution electron microscopy

1998 ◽  
Vol 13 (2) ◽  
pp. 446-450 ◽  
Author(s):  
Zenji Horita ◽  
David J. Smith ◽  
Minoru Nemoto ◽  
Ruslan Z. Valiev ◽  
Terence G. Langdon
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nonequilibrium State ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Typical Feature ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Resolution Electron

Submicrometer-grained (SMG) structures were produced in Cu and Ni using an intense plastic straining technique, and the grain boundaries and their vicinities were observed by high-resolution electron microscopy. The grain boundaries exhibited zigzag configurations with irregular arrangements of facets and steps, and thus they were found to be in a high-energy nonequilibrium state. A similar conclusion was reached earlier for SMG Al–Mg solid solution alloys which have much lower melting points than Cu and Ni, suggesting that nonequilibrium grain boundaries are a typical feature of metals processed by intense plastic straining.

Structural Transformation of a Germanium Σ=13 (510) [001] Tilt Grain Boundary under the Electron Beam

1990 ◽  
Vol 48 (1) ◽  
pp. 52-53 ◽  
Author(s):  
Jean-Luc Rouvière ◽  
Alain Bourret
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Structural Transformation ◽  
Mirror Symmetry ◽  
High Resolution Electron Microscopy ◽  
Structural Transformations ◽  
Covalent Bonds ◽  
Resolution Electron ◽  
Tilt Grain Boundary

The possible structural transformations during the sample preparations and the sample observations are important issues in electron microscopy. Several publications of High Resolution Electron Microscopy (HREM) have reported that structural transformations and evaporation of the thin parts of a specimen could happen in the microscope. Diffusion and preferential etchings could also occur during the sample preparation.Here we report a structural transformation of a germanium Σ=13 (510) [001] tilt grain boundary that occurred in a medium-voltage electron microscopy (JEOL 400KV).Among the different (001) tilt grain boundaries whose atomic structures were entirely determined by High Resolution Electron Microscopy (Σ = 5(310), Σ = 13 (320), Σ = 13 (510), Σ = 65 (1130), Σ = 25 (710) and Σ = 41 (910), the Σ = 13 (510) interface is the most interesting. It exhibits two kinds of structures. One of them, the M-structure, has tetracoordinated covalent bonds and is periodic (fig. 1). The other, the U-structure, is also tetracoordinated but is not strictly periodic (fig. 2). It is composed of a periodically repeated constant part that separates variable cores where some atoms can have several stable positions. The M-structure has a mirror glide symmetry. At Scherzer defocus, its HREM images have characteristic groups of three big white dots that are distributed on alternatively facing right and left arcs (fig. 1). The (001) projection of the U-structure has an apparent mirror symmetry, the portions of good coincidence zones (“perfect crystal structure”) regularly separate the variable cores regions (fig. 2).

High-resolution Electron Microscopy Observation of Grain-boundary Films in Superplastically Deformed Silicon Nitride

2000 ◽  
Vol 15 (7) ◽  
pp. 1551-1555 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Yuichi Ikuhara ◽  
Taketo Sakuma
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
High Resolution ◽  
Grain Boundary ◽  
Applied Stress ◽  
Thickness Distribution ◽  
High Resolution Electron Microscopy ◽  
Stress Axis ◽  
Resolution Electron ◽  
Boundary Films

The thickness distribution of grain-boundary films during the superplastic deformation of fine-grained β–silicon nitride was investigated by high-resolution electron microscopy. In particular, grain-boundary thickness was considered with respect to the stress axis in two orientations; namely, parallel and perpendicular to the direction of applied stress. The results showed that the thickness distribution in boundaries perpendicular to the direction of applied stress was unimodal, whereas in parallel boundaries it was bimodal. Moreover, it was found that the majority of film-free boundaries were parallel to the direction of applied stress in the extremely deformed sample. The variation in spacing reflects distribution of stresses within the material due to irregular shape of the grains and the existence of percolating load-bearing paths through the microstructure.

Boundary Structure of Y-ZrO2 Grains as Derived from High-Resolution Electron Microscopy

1999 ◽  
Vol 304-306 ◽  
pp. 567-572
Author(s):  
A. Kumao ◽  
N. Nakamura ◽  
H. Endoh ◽  
Y. Okamoto ◽  
Mayumi Suzuki
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Resolution Electron

High-Resolution Electron Microscopy Observations of Grain-Boundary Films in Silicon Nitride Ceramics

1992 ◽  
Vol 287 ◽  
Author(s):  
H.-J. Kleebe ◽  
M. K. Cinibulk ◽  
I. Tanaka ◽  
J. Bruley ◽  
R. M. Cannon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
High Resolution ◽  
Grain Boundary ◽  
Film Thickness ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Nitride Ceramics ◽  
Boundary Films ◽  
Repulsive Forces

ABSTRACTCharacterization of silicon nitride ceramics by transmission electron microscopy (TEM) provides structural and compositional information on intergranular phases necessary to elucidate the factors that can influence the presence and thickness of grain-boundary films. Different TEM techniques can be used for the detection and determination of intergranular-film thickness, however, the most accurate results are obtained by high-resolution electron microscopy (HREM). HREM studies were applied, in conjunction with analytical electron microscopy, to investigate the correlation between intergranular-phase composition and film thickness. Statistical analyses of a number of grain-boundary films provided experimental verification of a theoretical equilibrium film thickness. Model experiments on a high-purity Si3N4 material, doped with low amounts of Ca, suggest the presence of two repulsive forces, a steric force and a force produced by an electrical double layer, that may act to balance the attractive van der Waals force necessary to establish an equilibrium film thickness.

High resolution observations of short-range ordering in disordered Au4Mn alloys

1984 ◽  
Vol 42 ◽  
pp. 426-427
Author(s):  
Nobuo Tanaka ◽  
Ken-ichi Ohshima ◽  
Jinpei Harada ◽  
J.M. Cowley
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diffuse Scattering ◽  
Short Range ◽  
High Resolution Electron Microscopy ◽  
Atomic Level ◽  
X Ray ◽  
Direct Observations ◽  
Resolution Electron ◽  
Short Range Ordering

Observation of short range ordered (SRO) state in disordered binary alloys is the interesting topic in the point of order-disorder transition. The observation and analysis have been made with X-ray and neutron diffraction techniques which can give the SRO-parameters. These techniques, however, give only the information of an averaged structure. The ordering process is localized, so direct observations in atomic level by high resolution electron microscopy is needed for the detailed analysis.In the present study, disordered Au4Mn alloys were investigated with high resolution electron microscopy for the analysis of the origin of the characteristic SRO diffuse scattering (Fig. 1). The material was prepared by quenching and thinned by electrolytic polishing for microscopic observations. The specimen was observed along <120> direction by JEOL-200CX electron microscope (E=200keV).

Characterization of structural units in tilt grain boundaries

1992 ◽  
Vol 50 (1) ◽  
pp. 120-121
Author(s):  
Stuart McKernan ◽  
C. Barry Carter
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Structural Units ◽  
Symmetric Tilt ◽  
Resolution Electron ◽  
Special Cases ◽  
High Resolution Electron Microscope

General tilt grain boundaries can be viewed in terms of small structural units of varying complexity. High-resolution electron microscope (HREM) images of these boundaries in many materials show this repetitive similarity of the atomic structure at the boundary plane. The structure of particular grain boundaries has been examined for several special cases and commonly observed configurations include symmetric tilt grain boundaries and asymmetric tilt grain boundaries with one grain having a prominent, low-index facet. Several different configurations of the boundary structure may possibly occur, even in the same grain boundary. There are thus many possible ways to assemble the basic structural units to form a grain boundary. These structural units and their distribution have traditionally been examined by high-resolution electron microscopy. The images of the projection of the atomic columns (or the tunnels between atomic columns) providing a template for constructing “ball-and-stick ” models of the interface.

Sign in / Sign up

Export Citation Format

Share Document