An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices

2003 ◽  
Vol 16 (4) ◽  
pp. 387-400 ◽  
Author(s):  
Geng Yang ◽  
Shaodi Wang ◽  
Ruchuan Wang
Keyword(s):  
Numerical Simulation ◽  
Hydrodynamic Model ◽  
Semiconductor Devices ◽  
Preconditioning Technique ◽  
Model Semiconductor

ON QUANTUM HYDRODYNAMIC MODELS FOR ELECTRONIC TRANSPORT IN NANOSCALE SEMICONDUCTOR DEVICES

2010 ◽  
Vol 24 (04n05) ◽  
pp. 401-409
Author(s):  
EUGENIA TULCAN-PAULESCU ◽  
DAN COMǍNESCU ◽  
MARIUS PAULESCU
Keyword(s):  
Numerical Simulation ◽  
Electronic Transport ◽  
Resonant Tunneling ◽  
Semiconductor Devices ◽  
Resonant Tunneling Diode ◽  
Hydrodynamic Models ◽  
Tunneling Diode ◽  
Quantum Hydrodynamic ◽  
Ballistic Diode

This article deals with quantum hydrodynamic models (QHD) for electronic transport in semiconductor devices. Numerical simulation of ballistic diode and resonant tunneling diode is discussed. Based on overall results, it can be concluded that the considered QHD models have remarkable abilities to express the refinements of electronic transport in nanodevices.

scholarly journals Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 211-224 ◽  
Author(s):  
Edwin C. Kan ◽  
Zhiping Yu ◽  
Robert W. Dutton ◽  
Datong Chen ◽  
Umberto Ravaioli
Keyword(s):  
Numerical Simulation ◽  
Computational Efficiency ◽  
Recent Progress ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Drift Diffusion ◽  
Thermoelectric Effects ◽  
Transport Models

According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

Numerical Modeling of Oil Spill with Tidal and Wind-Driven Coupled Model in Bohai Bay

2013 ◽  
Vol 423-426 ◽  
pp. 1394-1397
Author(s):  
Ming Chang Li ◽  
Guang Yu Zhang ◽  
Qi Si ◽  
Shu Xiu Liang ◽  
Zhao Chen Sun
Keyword(s):  
Numerical Simulation ◽  
Numerical Modeling ◽  
Oil Spill ◽  
Hydrodynamic Model ◽  
Field Data ◽  
Coupled Model ◽  
Bohai Bay ◽  
Trajectory Simulation ◽  
Simulation Results

Based on the hydrodynamic model and wind field data, a multi-module coupled oil spill model is constructed for simulating the trajectory of oil movement. A case study is researched in Bohai Bay. The model works well and the numerical simulation results show the model is suitable for oil spill trajectory simulation. Two cases are considered with and without wind to show its important influence for the oil spill.

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