Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

2013 ◽  
Vol 24 (2) ◽  
pp. 259-267
Author(s):  
Ling Sun ◽  
Jianjun Gao ◽  
Andreas Werthof
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Guard Ring ◽  
Deep Submicrometer ◽  
Effect Transistor ◽  
High Frequency Performance

scholarly journals New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1089
Author(s):  
Fabrizio Palma
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Efficiency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Detection ◽  
Effect Transistor ◽  
Transistor Mos

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

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