18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

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InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c094 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C094 ◽

Cited By ~ 1

Author(s):

Chia-Yuan Chang ◽

Heng-Tung Hsu ◽

Edward Yi Chang ◽

Yasuyuki Miyamoto

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Noise ◽

Low Noise Amplifier ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Ultralow Power ◽

Noise Amplifier

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InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7119 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7119-7121 ◽

Cited By ~ 12

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Edward Yi Chang ◽

Yasuyuki Miyamoto ◽

Wen-Chung Tsern

Keyword(s):

Power Consumption ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Noise ◽

Low Noise Amplifier ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Ultralow Power ◽

Noise Amplifier

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Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

Journal of Circuits System and Computers ◽

10.1142/s0218126622500463 ◽

2021 ◽

pp. 2250046

Author(s):

Pinku Ranjan ◽

Swati Khandare

Keyword(s):

Phase Noise ◽

Electron Mobility ◽

Dielectric Resonator ◽

High Electron Mobility Transistor ◽

Low Noise ◽

Design System ◽

High Electron ◽

Space Applications ◽

High Electron Mobility ◽

High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

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