Parametric analysis for a millimeter wave low noise high electron mobility transistor

1988 ◽  
Vol 9 (3) ◽  
pp. 249-256 ◽  
Author(s):  
Asu Ram Jha
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
Parametric Analysis ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

Millimeter-wave low-noise high electron mobility transistors

1985 ◽  
Vol 6 (10) ◽  
pp. 531-533 ◽  
Author(s):  
P.C. Chao ◽  
S.C. Palmateer ◽  
P.M. Smith ◽  
U.K. Mishra ◽  
K.H.G. Duh ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology

2011 ◽  
Vol 54 (2) ◽  
pp. 329-332 ◽  
Author(s):  
Chih-Min Hu ◽  
Chung-Yu Hung ◽  
Chun-Hsueh Chu ◽  
Da-Chiang Chang ◽  
Ying-Zong Juang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
60 Ghz ◽  
High Electron Mobility ◽  
Noise Amplifier

Ultra-low noise characteristics of millimeter-wave high electron mobility transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 521-523 ◽  
Author(s):  
K.-H.G. Duh ◽  
S.-M.J. Liu ◽  
L.F. Lester ◽  
P.C. Chao ◽  
P.M. Smith ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Ultra Low Noise

Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L871-L872 ◽  
Author(s):  
Edward Yi Chang ◽  
Yueh-Chin Lin ◽  
Guan-Ji Chen ◽  
Huang-Ming Lee ◽  
Guo-Wei Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
High Linearity
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